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We have measured the thermal expansion between 20 and 450 °C of epitaxially grown GaAs thin films on Si(001) as well as of the Si substrate by means of high‐resolution x‐ray scattering. Our results show that the thermal expansion of GaAs in the direction parallel to the film plane follows...
The subband energies on GaAs‐GaAlAs field‐effect transistor samples were measured by tunneling spectroscopy using a structure, where the tunneling process starts from an accumulation layer, and a conventional structure, where the electrons tunnel from a metal electrode into the...
We have investigated the dark current‐voltage characteristics of GaAs p n homojunctions whose surfaces have been passivated with Na 2 S and (NH 4 ) 2 S chemical treatments. Reductions in 2 k T perimeter recombination currents by a factor of 3.2 were obtained for the two treatments. A shunt...
Reactive ion beam deposition has been used to grow c ‐axis‐oriented superconducting thin films in the Bi‐Ca‐Sr‐Cu‐O (BCSCO) system around the cation ratio 1:1:1:1 on single‐crystal (001) MgO. The films show a single superconducting transition with an initial onset near 85 K and a...
Thin films in the Bi‐Sr‐Ca‐Cu‐O system have been synthesized from homogeneous liquid citrate precursors by a spin‐coating and pyrolysis method. Films prepared on SrTiO 3 substrates of 100 orientation show strongly textured orientations with the c axis of the predominant Bi 4 Sr 3 Ca 3...
Er 2 Fe 1 4 B undergoes a spin reorientation from a low‐temperature planar moment orientation to a high‐temperature axial orientation at T s =336 K. We report for the first time that the planar to axial reorientation can be induced at temperatures below T s by applying a sufficiently large...
A bright white‐light electroluminescence (EL) is obtained in a SrS:Pr,K thin‐film EL device. The device shows a luminance level of 500 cd/m 2 with 1 kHz drive (1500 cd/m 2 at 5 kHz), which is five times as high as that obtained for a ZnS:Pr,F thin‐film EL device. The dominant EL excitation...
Transmission electron microscopy is used to study sublattice atomic ordering in as‐grown and Zn‐diffused epitaxial layers of Ga 0.5 In 0.5 P that are grown lattice matched to GaAs by low‐pressure metalorganic chemical vapor deposition. The as‐grown Ga 0.5 In 0.5 P layers exhibit an...
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