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Upon initiation of growth by molecular beam epitaxy, reflectance‐difference (RD) signals for (001)GaAs and AlAs surfaces exhibit a cyclic component that is periodic with (001) atomic bilayer coverage and that follows either surface structure or surface chemistry (coverage), depending on...
Superconducting thin films of Y‐Ba‐Cu oxide have been prepared on yttria‐stabilized zirconia substrates using metal trifluoroacetate spin‐on precursors. The films exhibit an extremely sharp resistive transition with zero resistance at temperatures as high as 94 K. The superconducting...
The structure of In 1− y (Al x Ga 1− x ) y P semiconductor alloy systems was studied by electron diffraction. Varied distribution of diffuse scattering and superstructure reflections was observed. The pertinent ordered structure is dependent on growth parameters, but not on the alloy systems....
Spatially resolved Stark spectra of triplet helium Rydberg states have been measured in the cathode fall region of a normal glow discharge. It is demonstrated that Stark spectral intensity distribution of a single Stark manifold provides both the electric field and the electric field gradient....
A strain‐induced multiple quantum well waveguide which can support two transverse modes in the plane normal to the quantum wells was excited in the TE mode by 350‐ns‐long probe pulses of low intensity from a dye laser tuned to a wavelength of 886 nm. A laser diode emitting at 850 nm was...
Low‐frequency current noise that has a f − 3 / 2 power law noise spectrum is observed in GaAs field‐effect devices. We show that this is due to modulation by a thermally activated and bias‐independent voltage noise in the gate. We identify this noise with generation recombination...
Magnetization measurements were performed at 77 K on Bi‐Sr‐Ca‐Cu‐O compounds having zero resistance temperatures at 103 and 82 K. The lower critical field H c 1 of the 103 K material was found to be 60% less than the H c 1 of YBa 2 Cu 3 O 7 . This suggests that the material has a higher H...
Reduced doping concentrations proximate to the active region in single quantum well (Al)GaAs lasers have been used to improve the external quantum efficiency. A substantial enhancement is observed in a structure in which, by design, the mode overlap with the doped confining regions is large. For...
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