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The generation‐annealing kinetics of interface and oxide traps are separated using a new time‐dependent high‐frequency capacitance‐voltage technique based on the independence of the trapped oxide charge density on the silicon surface energy band bending or surface potential. An...
Data are presented showing that the alloy (Si 2 ) x (GaAs) 1− x can be formed in a GaAs quantum well (QW) and shifts the operation of an Al x Ga 1− x As‐GaAs QW laser to higher energy. The (Si 2 ) x (GaAs) 1− x barrier, which is formed by sheet deposition (metalorganic chemical vapor...
We have successfully demonstrated the use of a novel chemical vapor deposition technique, ultrahigh vacuum/chemical vapor deposition, to deposit homoepitaxial silicon layers of high crystalline perfection at low temperatures ( T ≥750 °C). Rutherford backscattering and transmission electron...
The role of fluctuations in the potential due to randomly distributed dopants in the depletion layer of a metal‐semiconductor junction is explored. To be specific, the case of n ‐GaAs is considered. Monte Carlo simulation techniques are used to calculate the potential in the junction. By...
A new variably spaced superlattice energy filter is proposed which provides high‐energy injection of electrons into a bulk semiconductor layer based on resonant tunneling between adjacent quantum well levels which are brought into alignment by an applied bias. Applications of this concept to a...
Infrared absorption measurements are performed for a carbon‐induced localized vibrational mode in indium‐doped semi‐insulating GaAs crystals. Increase of the indium concentration in GaAs is found to result in a shift of the absorption peak to the lower energy side and a broadening of full...
Surface roughness of polished silicon wafers was observed by reflection electron microscopy. Small steps were clearly resolved as fringe pattern, and rather rough steps of 1.2–1.6 nm in height and 200–500 nm in interval were observed as dark and bright bands. This is the first direct...
High‐purity GaInP alloy was grown by chloride vapor phase epitaxy (Ga/In/PCl 3 /H 2 system) with two separate metal source regions. The alloy composition could be precisely controlled by using separate regions for Ga and In metals. From the photoluminescence and Hall effect analysis, epitaxial...
A simple model, using a quasi‐stationary, asymmetric, double probe theory, is presented to describe radio frequency planar glow discharge with a capacitively coupled excitation electrode. It reasonably agrees with available experimental results at frequencies lower than the ionic plasma frequency.
Electrical pulses shorter than 0.6 ps were generated by photoconductively shorting a charged coplanar transmission line with 80 fs laser pulses. After propagating 8 mm on the line the electrical pulses broadened to only 2.6 ps.
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