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The reported absence of the Gunn effect in photoexcited p ‐In 0.53 Ga 0.47 As is discussed from the viewpoint of the lesser electron scattering rate by acceptors than by donors. The donor‐to‐acceptor ratio of electron scattering cross sections is calculated for the carrier density range 10...
InP was grown by molecular beam epitaxy on InP(100) substrates using In and phosphorus cracked from PH 3 . The dependence of the electrical and optical properties of the films on the substrate and cracking furnace temperature is discussed. One film had 40% the photoluminescence intensity of that...
A Schottky barrier photodiode and a field‐effect transistor (FET) have been monolithically integrated on a GaAs substrate using molecular beam epitaxy. The electronic isolation between constituent elements has been achieved by the present device structure in which a semi‐insulating substrate...
A theory of the amplitude and phase modulation characteristic of a single mode semiconductor laser is presented. In this model the amplitude modulation couples through the complex susceptibility of the gain medium to the phase. We show that this coupling constant can be obtained by a...
Thermal wave transmission probing is used for nondestructive remote subsurface flaw detection in metal. It is shown that depth information of subsurface structure is obtained when two thermal wave sources are operated simultaneously in a stereoscopic arrangement.
Complete dielectric isolation of silicon regions 45 μm wide for microcircuits on silicon substrates is demonstrated by selective formation of oxidized porous silicon in heavily doped n ‐type regions. Anodic etching of n ‐type silicon in a hydrofluoric acid electrolyte exhibits a...
Recognizing that the super‐radiance emission rate is proportional to the product of the number of cooperative atoms in the upper level and that in the lower level, we propose simple deterministic and stochastic equations to describe the evolution of the super‐radiant atomic system pumped...
The central toroidal rotation velocities of tokamak plasmas have been measured from the Doppler shifts of spectral lines that are excited by charge transfer of the neutral hydrogen heating beams with fully ionized oxygen.
We report the photoluminescence (PL) and structural properties of a new class of efficient visible‐light‐emitting semiconductors: low defect density a ‐Si:H x alloys. For films prepared by the (thermal) homogeneous chemical vapor deposition (HOMOCVD) method, new broadband PL develops for x...
Continuous‐wave laser oscillation at 1.40, 1.43, 1.45, and 1.64 μm has been achieved in a recombining plasma produced by a Cd vapor arc in the presence of low‐pressure rapidly flowing He gas. The variation of gain with distance from the arc, calculated using a simple recombination model, is...
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