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Platinum/palladium lines (17 nm wide) have been defined by the electron‐beam exposure of a film of poly(methyl methacrylate) 60 nm thick supported on a 30‐nm‐thick carbon‐film substrate followed by liftoff of overcoated metal. Line pitch may be reduced to 50 nm before liftoff fails. An...
In a (110) oriented (YTmBi) 3 (FeGa) 5 O 12 garnet film with orthorhombic anisotropy, bubbles with different wall states were carefully studied using the bubble rocking method. Eight different bubble states have been identified, each belonging to a family of either large or small bubbles and...
The incorporation of sulfur and measurements of its properties as a dopant in Al 0.4 Ga 0.6 As grown by liquid phase epitaxy at 780 °C are reported. Sulfur is readily incorporated, with a segregation coefficient of ∼100. However, sulfur creates deep centers in Al 0.4 Ga 0.6 As and produces low...
The crystal quality of heteroepitaxial Ge 1− x Si x films produced by transient heating of Ge‐coated Si substrates has been studied by using transmission electron microscopy (TEM) and 4 He + ‐ion channeling. The TEM observations reveal a high density of misfit dislocations near the...
We report static magnetization measurements on the compositionally modulated ferromagnetic alloy Cu/Ni, which, contrary to earlier ferromagnetic resonance measurements, show the moment per Ni atom is reduced relative to pure Ni. The low‐temperature magnetization is found to vary linearly with...
A new technique for controlled etching of micrometer‐size regions on thin films has been developed. Dopant atoms are deposited on the film surface by UV laser photodissociation of a gas and incorporated by simultaneous heating with a visible laser beam. The process has been demonstrated by...
A large enhancement of the ratio between the proelectric coefficient r and the heat capacity C is obtained for LiNbO 3 for T <10 K . This suggests that this material could be a good infrared detector at low temperatures.
The silicon‐sapphire interface of CVD silicon on a (1102) sapphire substrate has been studied by high‐resolution transmission electron microscopy. Cross‐section images of the interface are presented where the silicon and sapphire lattices are directly resolved. The images show that the...
A general analysis of nonuniformly doped, one‐dimensional space‐charge layers in the Boltzmann approximation is presented from which a direct connection is established to the depletion approximation. An error equation is derived with no additional approximations other than for the neglect of...
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