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The possibility of sound amplification in a semiconductor subjected to an external temperature gradient is discussed. It is shown that for k l ≪1 and short‐circuited samples, the temperature gradient threshold for amplification varies inversely proportional to ( k l ) 2 .
The breakdown thresholds of unfiltered laboratory air were measured in the 3.8‐ and 2.7‐μm regions. The breakdown threshold at 10.6 μm was also measured under identical experimental conditions in order to provide a correlation with previous work. Measurements at different focal‐spot radii...
We have observed 5 d ‐to‐5 d energy transfer from trivalent Tm to Nd in YF 3 and LuF 3 and Nd to Ce in YF 3 . In a YF 3 : 5 mol% Tm : 1 mol% Nd sample, the probability of energy transfer from Tm 3+ to Nd 3+ was determined to be 0.94. The 5 d ‐to‐5 d energy transfer has the possibility of...
Excitation of laser transitions in He‐Kr, He‐Ar, Ne‐Xe, and He‐Ne‐Xe mixtures was investigated in hollow‐cathode discharges. The dominant excitation mechanism of the noble‐gas ions was found to be collisions of the second kind between the ground‐state noble‐gas ions and helium...
A new type of transducer array has been designed and built for imaging surface defects in metals such as aluminum. The array is formed by edge bonding a piece of piezoelectric material to a substrate of the same material as the sample to be tested. The individual elements in the array are formed...
Nonalloyed Ohmic contacts to n ‐GaAs have been formed by vapor deposition of TiPtAu on pulse‐electron‐beam‐annealed Se‐implanted surfaces. Peak carrier concentrations were about 1.2×10 19 /cm 3 , yielding a specific contact resistance r c ≲6×10 −7 Ω cm 2 .
Highly resistive hydrogenated amorphous‐silicon film has been fabricated and examined as blocking‐type photoconductive target of a vidicon‐type image pickup tube. The results indicate that this novel silicon vidicon has many advantages over conventional ones.
In 〈111〉‐oriented silicon, annealing high‐dose (∼1×10 16 /cm 2 ) implanted layers of arsenic in an ambient containing more than a few tenths of 1% oxygen in nitrogen results in dislocation networks that extend well beyond the implanted regions. As the oxygen concentration in the...
Silicon crystals containing dislocations which terminated in the free surface were melted to depths of about 0.5 μm by rube‐laser pulses, and the growth characteristics of dislocations of various types were studied by transmission electron microscopy. It was found that both edge‐ and...
A derivative technique is presented to determine optically the electrical parameters of a p ‐ n junction. The method relies upon the saturation produced in the optically generated current delivered to a load resistor as a result of increases in either the average optical power incident on the p...
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