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Data are presented showing that Al x Ga 1− x As ( x ∼0.42) grown by metalorganic chemical vapor deposition (MO‐CVD) will operate as a photopumped laser to wavelengths as short as ∼6200 Å (77 °K). From the different spectral behavior of two separately photopumped epitaxial Al x Ga 1− x...
Approximate expressions are presented which are useful for computing the position of the Fermi level in a semiconductor when the carrier concentration is known. A simple approximation formula is applicable for η= E F / k T ⩽5.7, while an extended approximation can be used up to η⩽20, the...
The reflectivity of single‐crystal and amorphous GaAs samples was measured in the photon energy range 1.5–7.0 eV. The amorphous specimens were obtained by 400‐keV Te implantation at room temperature. Some structures at high photon energy are still present in the imaginary part of the...
A new p ‐ n photodetector operating at room temperature and sensitive in the near infrared for wavelengths as long as 1.6 μm has been made from Ga 0.47 In 0.53 As grown lattice matched on InP substrates by LPE. These detectors display avalanche gain and dark current as low as 2×10 −9 A....
GaAs solar cells with conversion efficiencies as high as 14% at AM1 have been grown by the GaCl/AsH 3 hydride technique. Thin (∼200 Å) layers of InGaP were used to passivate the GaAs top surface. We observe a 70‐fold increase in photoluminescence intensity of the GaAs after passivation,...
The spin polarization of photoelectrons emitted from optically pumped negative electron affinity GaAs shows a systematic depolarization. This is attributed to the spin‐flip scattering at the Cs‐O‐Cs overlayer. The photoexcited electrons thermalize to the Γ point prior to their escape and...
We report cw oscillation on five transitions of Cu + in the near infrared in hollow‐cathode He‐CuI, He‐CuBr, and He‐CuCl gas discharges. Excitation of the upper laser levels is attributed to thermal‐energy charge‐transfer reactions between ground‐state He ions and neutral Cu atoms...
Substantial improvements in energy conversion efficiency are reported for silicon MIS solar cells fabricated on both single‐crystalline and semicrystalline substrates. Based on active area, AM1 efficiencies of 15.1% and 12.6%, respectively, have been obtained for 3.1‐cm 2 cells at 26 °C.
Temporal pulse splitting has been observed at an aperture 8 m from a passively mode‐locked Nd : YAG laser oscillator. A theoretical model using the published value of the nonlinear refractive index n 2 of YAG shows the splitting mechanism.
Rates, α, for the recombination of Kr + and Kr + 2 with F − in various buffer rare gases (He, Ne, Ar, Kr, Xe) at 300 K are calculated for a wide range of gas pressures. For pressures 1–5 atm, the population of KrF∗ via recombination is greatest for Ne and Ar as third bodies, yielding...
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