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Thin heteroepitaxial layers of InAs have been grown on (100) GaAs substrates and buffer layers by molecular beam deposition in a UHV chamber. Smooth epitaxial layers as indicated by i n s i t u MEED patterns have been obtained at substrate temperatures in the range 330–530 °C and SEM...
An edge effect observed in high‐resolution scanning Auger‐electron microscopy is modeled by Monte Carlo methods based on the direct simulation of individual inelastic scattering processes. The Monte Carlo method permits the simulation of the spatial distribution of excited electrons generated...
In the n ‐GaAs/Se = –Se = x –OH − /C liquid junction solar cell, modification of the semiconductor surface by incorporation of ruthenium increases both the fill factor and the open‐circuit voltage and improves the reproducibility of performance. The power conversion efficiency of the...
A single prism has been used to simultaneously couple light into and out of an optical waveguide, with a guiding length of 1 cm. The method, which is simple and reproducible, utilizes two optimized gaps for the coupling regions. Coupling efficiencies in excess of 90% have been achieved.
Near‐ and far‐field patterns of narrow (⩽10 μm) stripe‐geometry lasers are reported which differ significantly from the Gaussian patterns predicted and observed in wider‐stripe lasers. The field patterns are explained by using a waveguide model which takes into account the finite...
Proposed mechanisms for the observed performance limitations in heavily doped silicon transistors and solar cells are reexamined in detail. The physical‐defect mechanism is ruled out by the uniformly negative results of new measurements of defects by x‐ray topography and deep‐level...
A discharge technique based on the use of an electron‐beam‐induced plasma return current to produce and heat large‐volume plasmas is described. The results of discharge studies using this technique in attachment‐dominated mixtures are presented. The results are found to be adequately...
Tunable dye‐laser emission has been obtained up to 12 850 Å by pumping a dimethyl sulfoxide solution of a carbocyanine dye with an Nd : YAG laser. The solution lased in two distinct wavelength ranges of 11 070–11 870 and 11 920–12 850 Å depending on the dye concentration.
Photolytic pumping of the HgCl 35 ( B → X ) laser has been demonstrated. Oscillation at 557.6 and 558.4 nm was obtained by irradiating HgCl 2 vapor and helium with incoherent Xe∗ 2 emission at 172 nm from an e‐beam‐excited xenon plasma. Also, by photodissociating HgCl 2 with ArCl∗ (175...
The dependence of the surface morphology and the interface misfit dislocation density on the amount of lattice mismatch varies considerably with the composition of the quaternary material in the 1.15–1.31‐μm band‐gap range. For the same amount of lattice mismatch the surface morphology...
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