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The analyses of Nb‐Ge films prepared by sputtering with a modified rf arrangement are reported. The results indicate the importance of thermalization of sputtered particles for the formation of the high‐transition‐temperature compound Nb 3 Ge.
Electrical resistivity measurements have been used to observe damage production rates for Cu, Nb, and Pt irradiated with high‐energy d‐Be neutrons at 4.2 °K. The neutrons were generated at the Oak Ridge Isochronous Cyclotron by the reaction of 40‐MeV deuterons incident on a thick Be...
Distributed feedback Pb 1− x Sn x Te double‐heterostructure lasers grown by molecular‐beam epitaxy with cw operation up to 50 K are reported. The grating of 1.1‐μm periodicity operates in the first Bragg order near 800 cm −1 (12.5 μm). Single‐mode operation is obtained over a wide...
A wavelength‐selective beamsplitter has been realized by fabricating chirped (variable period) grating in an optical waveguide. This beamsplitter can demultiplex a signal traveling in a fiber and send each frequency component to a different fiber.
A nonradiative dark region along a surface ripple is observed in optically and electrically excited GaP LPE layers. The region originates from the substrate interface and terminates at the ridge of the surface ripple. It is clearly distinguishable from the known one caused by dislocation in its...
Laser excitation of metal vapors and gases in four types of hollow cathodes employing transverse electrical discharges is discussed. A water‐cooled slot cathode is demonstrated to provide two distinct laser excitation modes. cw laser action at 7471, 7042, and 6920 Å from Al II, which is...
A new technique using radioactive 31 Si (half‐life =2.62 h), formed in a nuclear reactor, as a marker for studying silicide formation is described. A few hundred angstroms of radioactive silicon is first deposited onto the silicon substrate, followed immediately by the deposition of a few...
We propose a new integrated interferometric reflector (IIR) with electrical control. The IIR is suitable for incorporation in integrated optical devices as a laser reflector.
Experimental evidence of interface state generation due to the emission of leakage electrons from the silicon substrate into SiO 2 is presented. Interface states were measured on MNOS capacitors before and after temperature‐bias stress, where the electron emission process occurred, using the...
Nb 3 Ir polycrystalline films with the A15 structure deposited on sapphire were used as substrates for the epitaxial growth of Nb 3 Ge because of the favorable lattice parameter match. The experimental results clearly show that epitaxial growth indeed occurs and helps to extend the range of...
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