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Optical behavior of isoelectronic impurities in Al x Ga 1− x As ( x =0.37) is investigated. Photoluminescence of the samples implanted with N was measured at 2 °K. A new luminescence line is observed at an energy which is 90 meV below the edge emission peak. The integrated intensity of the...
It is demonstrated that photoelectrons distributed in initial velocity can be extracted from electrically broad‐band configurations with extremely high time resolutions. Properties and values of parameters characterizing real materials and laboratory‐generated electrical sampling signals are...
High‐power laser emission has been observed from xenon fluoride (XeF) at 351.1 and 353.1 nm. A peak laser power of 0.5 MW was obtained by using a mixture of Ar, Xe, and NF 3 in the ratio of 250 : 25 : 1 at a total pressure of 1.7 atm. The laser gas was excited by a 1‐MeV 20‐kA electron beam...
Addition of a fluorescent dye to the liquid used for scattering particle production in a laser Doppler velocimeter can result in a number of practical advantages. An investigation of this concept has been carried out using various dyes and solvents to determine its potential and limitations. The...
Peltier‐induced liquid‐phase epitaxial growth of Ga 1− x Al x As (0.1⩽ x ⩽0.3) was carried out at constant temperature with the dc as the sole driving force and controlling element of the growth. Electric currents of 10–30 A/cm 2 were passed through the solid‐liquid (S‐L)...
Laser emission on the I( 2 P 1/2 ) →I( 2 P 3/2 ) transition at 1.32 μm has been excited for the first time in an electrical discharge. A mixture of about 1% CF 3 I in N 2 was excited in a uv‐initiated pulsed dicharge between planar electrodes. Iodine atoms in the upper and lower laser levels...
Phase matching for frequency tripling of 1.06 μm is demonstrated in a homogeneous mixture of sodium and magnesium vapor. For phase matching, the ratio of Mg to Na vapor pressures is 2 : 1. This ratio is about 1/75 of the ratio of Xe to Na required for phase matching.
A measurement of the Raman scattering efficiencies from an ensemble of random‐oriented cyrstallites provides a method for evaluating the electro‐optic coefficients in Cu X ( X =Cl, Br, I) binary zinc‐blend semiconductors. A systematic trend in the values of both the electronic and ionic...
Subpicosecond time resolution with a new design of the electron‐optical streak camera (the Photochron II) is demonstrated with ultrashort Raman pulses.
Selective multilayer epitaxial growth of GaAs‐Ga 1− x Al x As through stripe openings in Al 2 O 3 mask is reported. The technique results in prismatic layers of GaAs and Ga 1− x Al x As ’’embedded’ in each other and leads to controllable uniform structures terminated by crystal faces....
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