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The photoluminescence spectrum of Zn‐implanted GaN peaks at 2.87 eV at room temperature. The emission efficiency decreases linearly with the logarithm of the Zn concentration in the range 1–20×10 18 Zn∕cm 3 .
Faceting and growth striations have been revealed by the photographic mapping of the Tb 3+ ‐ or Eu 3+ ‐activated luminescence in Czochralski‐grown gadolinium gallium garnet. Both fluorescence and thermoluminescence topographs have been prepared. For the case of Tb 3+ luminescence, facet...
A new method to achieve periodic reversals of magnetization, necessary to attain high mode conversion efficiencies in magneto‐optic waveguides, is described. It is acomplished by means of a periodic Permalloy structure overlaying the optical propagation path. With proper bias fields, we have...
The production of refractive‐index gratings by photoexcitation of electrons from traps followed by drift or diffusion and then retrapping is treated without the assumption made by Amodei that the migration or diffusion length is small compared to the grating wavelength. It is shown that the...
The electroluminescence and photoconductivity of GaP:N diodes have been studied as a function of temperature and hydrostatic pressure. The A ‐line absorption and emission is relatively unaffected despite the large decrease in the electron binding energy with hydrostatic pressure. A model is...
The incorporation of Mn in Fe‐doped LiNbO 3 leads to photochromic behavior involving photoreversible conversion of Fe 3+ to Fe 2+ . This process can be used to advantage to control the holographic storage sensitivity of the material.
Experimental and theoretical investigations are made into the spatial distribution of photoelectrons produced in a high‐pressure gas containing trace amounts of tri‐ n ‐propyl amine. The results show that in such a system photoelectrons may be produced over large distances, suggesting the...
An experimental investigation into noise‐generating processes in the He☒Cd + laser is described. We report the lowest output noise (0.14%) to date for the 4416‐Å transition, as well as excellent dc stability.
The feasibility of producing electrically and optically isolated monolithic devices from planar GaP p‐n junction material by the use of laser‐machining techniques has been demonstrated. By machining deep narrow grooves through the p‐n junction and around the areas to be contacted, it is...
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