Within the last year
Within the past 3 years
1 - 10 of 25 articles
Room‐temperature laser operation in a three‐dimensional Nd‐glass waveguide is reported. The waveguide was fabricated by a double‐diffusion process with ion migration. A Nd‐glass laser, 4 mm in length, was end‐pumped at 590‐nm wavelength with a pulsed Rhodamine 6G dye laser. The...
The production of high gain at a wavelength of 10.6 μm in CO 2 ☒N 2 gas mixtures at pressures up to 300 kPa (3 atm) has been demonstrated using brief ionizing pulses from a gas‐discharge electron gun and a low‐inductance circuit to supply energy to the gas mixture. Increased gain, up to 10...
A study of electron trapping as a function of (Teflon) sample temperature during irradiation is carried out using the thermally stimulated current technique. Results show that bombardment should take place at elevated sample temperature if one desires a long‐lived stable electret. The effect of...
The principle of detailed balance is used to show that at a maximum in an electron excitation cross section, due to a very‐short‐lived negative ion resonance (10 −14 –10 −16 sec), the electron deexcitation cross section can be significantly smaller than the electron excitation cross...
Holograms of two‐ and three‐dimensional objects can be taken without a separate reference beam. Two methods are discussed, the first one for two‐dimensional objects and the other for three‐dimensional ones. Experimental arrangements and image quality are discussed and supporting results...
Ion implantation has been used as a doping technique to fabricate an injection laser in GaAs. The dopant atom is Zn. At 77 °K the threshold current density is 2×10 3 A∕cm 2 .
Resonant tunneling of electrons has been observed in double‐barrier structures having a thin GaAs sandwiched between two GaAlas barriers. The resonance manifests itself as peaks or humps in the tunneling current at voltages near the quasistationary states of the potential well. The structures...
The influence of the active layer dopant on the degradation of GaAs☒Al x Ga 1− x As double‐heterostructure lasers has been studied using pulsed excitation. Compensated p ‐type dopants give the slowest degradation, while n ‐type dopants give the most rapid. These results can be...
Two‐step sequential excitation of fluorescence was produced in ICl vapor using two synchronized tunable laser sources. The pumping scheme involved the E←A←X electronic transitions with subsequent E→A transitions being observed in fluorescence.
A narrow ridge was ion‐beam etched on an outdiffused LiNbO 3 crystal to form a single‐mode waveguide confining the beam in both transverse dimensions. Electrodes were evaporated along the ridge to produce a very efficient electro‐optic phase modulator requiring a power of 20 μ W∕MHz of...
Save this article to read later. You can see your Read Later on your DeepDyve homepage.
To save an article, log in first, or sign up for a DeepDyve account if you don't already have one.
Sign Up Log In
To subscribe to email alerts, please log in first, or sign up for a DeepDyve account if you don't already have one.
Read and print from thousands of top scholarly journals.
Sign up with Facebook
Sign up with Google
Already have an account? Log in
To get new article updates from a journal on your personalized homepage, please log in first, or sign up for a DeepDyve account if you don't already have one.