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Attenuation coefficients have been measured at 6328 Å in liquid waveguides bounded on one side by a metal wall. Provided that the measurements be made on selected samples meeting certain criterions, Ohmic boundary absorption is found to depend on mode order N as ( N + 1) 2 and waveguide...
In order to clarify the poisoning mechanism of the LaB 6 cathode, the temperature dependence of oxidation on a single‐crystal surface was examined by Auger electron spectroscopy. The oxidation gives the chemical effect on the La and B Auger peaks. Evidence from the Auger spectra indicates that...
Both adsorbed reacted surface oxygen (surface oxide) and the dynamic implantation range of primary oxygen ions have been shown to influence secondary ion yields and complicate the interpretation of secondary ion mass spectrometry (SIMS) in‐depth analysis within the first few hundred angstroms...
Although the wavelength of maximum scattering in cholesteric liquid crystals is strongly angularly dependent, doping with nematics can produce systems in which the angular distortion is considerably reduced, thus making color display applications much more feasible.
Laser action was observed in GaAs epitaxial films using corrugation feedback. The output wavelength was found to depend on the corrugation period. The loss, threshold gain, and feedback parameters were determined and compared with theoretical predictions.
A new technique for simultaneous operation of a dye laser at a number of independently tunable wavelengths is described. The system utilizes holographic wavelength selectors in succession, each aligned to choose one particular wavelength, and the output beam contains these wavelengths...
Several high‐resolution HgI 2 x‐ray detectors have been made from single crystals grown from the vapor phase. Hole and electron transport properties and detector electrical characteristics are described. Measured mobility‐lifetime product for electrons is 8×10 −5 cm 2 ∕V with a μ e of...
The two‐photon absorption coefficient of GaAs at 1.32 μm is found to be 0.033 ± 0.015 cm∕MW. This value was obtained from transmission measurements employing a Q ‐switched Nd☒YAG laser and an improved theoretical analysis taking into account fluctuations and the Gaussian pulse shape....
During a study of the annealing of damage produced by high‐dose (10 15 –10 16 ions∕cm 2 ) arsenic implantations into Si, a stable high‐defect‐density structure was observed. It resulted from implantations through thin SiO 2 films covering the Si. Formation of the stable defect structure...
The superconductor‐semiconductor contact diode, or super‐Schottky‐barrier‐diode, has been examined theoretically and experimentally as a video detector of high‐frequency radiation. The measured noise‐equivalent power (NEP) of the device is believed to be the smallest value ever...
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