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We have measured the lasing energy of optically pumped high‐purity GaAs from 2 to 300 K. Low‐temperature results show strong many‐body effects in the band‐to‐band lasing below the single‐particle band‐gap energy, and the high‐temperature data indicate that the lasing energy...
Refractive‐index‐versus‐wavelength data were determined from 509 to 633 nm for a number of bubble memory rare‐earth garnet films. Using these data, the film thickness of these materials can be determined with an accuracy of 1–1.5%.
Photodiodes in thin films of epitaxial PbTe grown on BaF 2 have been fabricated using Sb + ion implantation to create an n ‐type layer in p ‐type films. At 77 °K, 15‐mil‐square diodes had typical zero‐bias resistances of 1 MΩ. With the infrared radiation incident on the n ‐type...
The Rytov approximation for wave propagation in random media is generalized to include the effects of self‐focusing. Solutions are obtained which show how the intensity fluctuations, which are either initially present in the wave or which are induced by the random inhomogeneities in the media,...
The thermodynamics of using laser heating in conjunction with magnetic compression in θ‐pinch plasmas is discussed. It is shown that the minimum laser energy required to achieve a given plasma filling factor Λ (ratio of plasma to plasma tube area) is E laser = Λ 2∕3 E plasma and that any...
Noncollinear mixing of radiation from CO 2 TEA lasers has been used to generate phase‐matched far‐infrared difference‐frequency radiation in GaAs. The wavelength of the far‐infrared radiation was tuned from inverted lazy s 70 μm to 2 mm in small steps by selecting the frequencies of the...
Laser action at 172.9 nm has been observed in xenon and krypton‐xenon mixtures following short‐pulse excitation (2.5 nsec) by a relativistic electron beam. Peak powers inverted lazy s 80 kW cm −2 in a 5‐nsec pulse were obtained. The pumping sheme used in this work is noteworthy because...
Q ‐switched laser‐induced damage to transparent surfaces is shown to occur in many cases without the formation of a bright plasma. This ``aplasmic'' damage is apparently due to absorption by submicron inclusions. The prominence of damage is a function of material, polishing compound, and...
Boron and phosphorus ions of 8‐MeV and 6‐keV energy, respectively, have been implanted into silicon single crystals to form a n + ‐n‐p + ‐n‐n + structure. Tests of this duodiode nuclear detector system with 5.5‐MeV α particles yielded resolutions of about 100 keV (FWHM).
By studying the morphology of threshold damage and observing for the first time the predicted ``pulse duration‐inclusion size'' relationship, it is shown that the threshold for laser damage to nonabsorbing dielectric coatings is determined by the presence of metallic or highly absorbing...
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