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It is shown that impurities introduced by thermal diffusion can improve propagation properties of surface waves excited on unpolarized ceramic plates using an interdigital arrangement of electrodes. In BaTiO 3 ceramics, CO 2 O 3 reduces the attenuation constant of surface waves to one‐half the...
BaTiO 3 films were prepared onto InSb or GaAs semiconductor by RF sputtering with a tetrode apparatus at about 300°C. Analysis by x‐ray diffraction patterns shows that the films are of tetragonal structure of BaTiO 3 . Electrical properties of these films were measured and the Curie point was...
The results of a calculation and measurement of the absorption of 10.6‐μ laser radiation by CO 2 at high pressures are described. It is shown that the effect of rotational line overlap becomes significant at pressures slightly greater than 1 atm. At 8 atm, for example, the calculated...
An efficient internally frequency‐doubled mode‐locked Nd:YAG laser has been operated. An interaction between the intracavity harmonic generation and mode locking, which results in a lengthening of the mode‐locked pulse and a corresponding decrease in fundamental circulating power, has been...
We measure the number of charges produced when a laser beam is focused in neon. Taking into account the configuration of the emitted modes we obtain experimental values for the cross section for multiphoton ionization. By varying the energy of the emitted photons, we can compare our results with...
The frequency of an ion wave decreases in an rf electric field. At the same time strong suppression of the ion‐wave instability occurs. The frequency shift is explained by the additional pressure which is produced by the spatial modulation of the rf field by the ion wave.
Simultaneous mode locking and pulse coupling of a CO 2 laser has been achieved using a single internal GaAs element with electrodes on both the (001) and (110) faces. Coupling of pulses from the laser did not affect the stability of the mode‐locked pulse train. Possible application of the...
We have activated epitaxial layers of vapor‐deposited Ga 1− x In x As alloys in the bandgap range 0.96–1.18 eV with Cs and O 2 . The Cs☒O was determined to be ∼1 monolayer thick. For each sample the photothreshold energy was approximately equal to the bandgap energy. A long‐wavelength...
The intensity of the 1942‐Å Hg + ion resonance line in Hg‐inert‐gas discharges has been measured as a function of current density and Hg pressure in the range from 1 to about 15 A∕cm 2 and pressure from 10 −3 to 0.5 Torr. In the Hg☒Ar discharge the intensity of this line varies as...
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