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Magnetization measurements performed on three types of Nb☒Ti superconducting composite wire have shown that twisted multistrand wire not only is very stable but also has the smallest magetization and thus is the most suitable for ac applications.
Continuous operation of a YA1G:Nd laser has been achieved using incoherent injection luminescent pumping. GaAs x P 1− x light‐emitting diodes are used at liquid‐nitrogen temperatures to provide effective optical pumping of YA1G:Nd over a narrow wavelength range. Initial experiments give a...
Uniform avalanche Schottky barrier photodiodes have been fabricated by plating a thin layer of platinum on GaAs and forming a guard ring by proton radiation. Operating at a gain of 100 these photodiodes exhibit gain‐bandwidth products greater than 50 GHz and enhanced signal to noise ratio in...
Optical beam probing using Bragg diffraction from traveling acoustic domains in CdS has revealed a direct correlation between the frequency of maximum phonon intensity and the total integrated acoustic intensity. At the point of initiation of the acoustic domain the frequency of maximum phonon...
Data are presented showing that p ‐type GaAs:Ge can be lased on band‐to‐band, conduction band‐to‐acceptor impurity, or simultaneously on both transitions. Recombination transitions to the Ge acceptor impurity are well separated in energy from those to the neighboring band edge, and in...
Radiative lifetimes and time‐resolved spectra have been obtained for high‐purity n ‐type gallium arsenide at low temperatures. The ∼ 1.51‐eV bands, generally associated with the annihilation of free and bound excitons, decay very rapidly, τ < 15 nsec. The 1.49‐eV band, variously...
The orientation dependence of the backscattering yield of 1.8‐MeV carbon ions has been used to determine the lattice location of group III and V elements implanted into Si and Ge at 30 keV and ∼350°C. It is shown that the lattice location of p ‐type dopants is affected by the presence of n...
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