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In this paper, a video display system for direct imaging of transmission and reflection x‐ray topographs of Si and GaAs wafers is described. This system allows instantaneous viewing of x‐ray topographs with fields of view on the order of 2 cm by 1 cm. The resolution of the system is now...
The speed of the transition between the pair tunneling state and the single‐particle tunneling state of Josephson junctions is in the nanosecond region for sufficiently large junction areas and low critical currents. The transition time varies with junction capacitance and inversely with...
Li foils for transmission electron microscopy were prepared by shaving a Li bar in a dry box under an Ar atmosphere. The specimen was transferred to the microscope using a modified Hitachi specimen exchange device. Li single‐crystal diffraction patterns were observed. The microstructure...
Line centers of a number of previously unresolved SF 6 transitions of the fundamental ν 3 band have been observed and their frequencies have been determined relative to the P ‐branch transitions of the CO 2 10.6‐μ laser. Measurements of dip widths at small saturation levels yielded a...
The well‐known convolution technique was used to measure subnanosecond pulses generated from ``filaments'' in a self‐focused beam. The results showed that in toluene, the pulse width varied from 200 to 100 psec or less, and the peak power was about 30 kW.
Experimental evidence is presented for feedback‐narrowed far‐infrared response of a point contact Josephson junction which is strongly coupled to a resonant cavity. The observed response shows high sensitivity (NEP≲10 −14 W/ ) ( NEP ≲ 1 0 − 14 W ∕ Hz ) and frequency selectivity ( Q...
Absorption of CO 2 laser lines by SF 6 was studied by several methods for various P laser lines of the 00°1–10°0 band. It is concluded that the absorption of the P 20 line is mainly due to the several SF 6 lines with J values between 50 and 80.
The pulsed water‐vapor laser has been operated at peak output power levels of 5 kW (all lines) and an average power of ¼ W. The frequency of the most energetic component of the emission has been measured to be ν = 357.506 ± 0.003 cm −1 .
Trapping‐detrapping pulse shapes have been observed in two Si(Li) detectors in the temperature range 8.5–70°K. A semiquantitative treatment leads to the conclusion that shallow trapping levels are responsible for the observed phenomena. It appears likely that these levels correspond to the...
In the present report, data are presented on the transition temperatures and the critical currents of laminated Nb 3 Sn and Nb 3 Al 0.8 Ge 0.2 tapes. The samples were prepared by rolling techniques and diffusion process. At first, the plates were prepared by accumulating foils of materials...
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