journal article
LitStream Collection
The Effect of Negative Magnetoresistance in Silicon to Create Multifunctional Sensors
Bakhadyrkhanov, M. K.; Iliev, Kh. M.; Mavlonov, G. Kh.; Ibodullaev, Sh. N.; Tachilin, S. A.
doi: 10.1134/s1063785022010023pmid: N/A
The negative magnetoresistance in silicon containing nanoclusters of manganese atoms is highly sensitive to various external effects. We determined the regularities of the change in the negative magnetoresistance in silicon containing nanoclusters of manganese atoms depending on temperature, illumination, and electric and magnetic fields. A new class of multifunctional sensors of physical quantities can be developed based on a single silicon crystal containing nanoclusters of manganese atoms.