"Technical Physics Letters"

Bessolov, V. N.;Kompan, M. E.;Konenkova, E. V.;Panteleev, V. N.;Rodin, S. N.;Shcheglov, M. P.

doi: 10.1134/S106378501906004Xpmid: N/A

Abstract Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10\(\bar {1}\)1) on a V-shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(10\(\bar {1}\)1) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ωθ ~ 45 arcmin, whereas for the semipolar GaN(10\(\bar {1}\)1), these values are –0.29 GPa and ωθ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.

Galushka, V. V.;Zharkova, E. A.;Terin, D. V.;Sidorov, V. I.;Khasina, E. I.

doi: 10.1134/S1063785019060063pmid: N/A

Abstract—The effect of low-dose γ radiation on the mechanisms of low-frequency conductivity of mesoporous silicon has been studied. It has been shown that γ irradiation preserves the hopping character of conductivity at a change of the frequency of phonon lattice vibrations, a decrease in the size of the hop, and a shift of the level of the capture of traps to the Fermi level in the band gap, which makes the structure with mesoporous silicon irradiated by γ radiation promising for the creation of multifunctional resistive and capacitive devices.

Zienko, S. I.;Slabkovskii, D. S.

doi: 10.1134/S1063785019060166pmid: N/A

Abstract It is determined experimentally that the luminescence spectrum of a diamond at room temperature contains one or two Gaussian peaks. This result is associated with the exciton–phonon interaction in diamond, which, along with the zero-phonon line, contains phonon repetitions of the first and second order. This phenomenon is characteristic only of natural diamonds and is absent in synthetic samples. Therefore, it can be used to identify cut diamonds.

Altynnikov, A. G.;Gagarin, A. G.;Tumarkin, A. V.;Kotel’nikov, I. V.

doi: 10.1134/S1063785019060026pmid: N/A

Abstract The electrical properties of barium–strontium titanate films and tunable capacitors based on them are studied in a wide frequency range. The dielectric losses in ferroelectric films at frequencies up to 30 GHz are estimated based on the parameters of capacitors measured using various resonance techniques. Direct measurements of the properties of the films were carried out at a frequency of 60 GHz using the open-resonator technique. Based on the comparison with semiconductor analogues, the prospects of using thin-film ferroelectric elements in the millimeter-wavelength range are shown.

Ashikhmin, A. E.;Piskunov, M. V.;Yanovskii, V. A.

doi: 10.1134/S1063785019060038pmid: N/A

Abstract The hydrodynamic regimes of interaction between a droplet of the fuel water-in-diesel microemulsion with a heated rigid surface are studied, and regime maps are drawn with the separation of constitutive equations and inertia, viscous, and surface tension forces. The critical values of the Weber and Reynolds numbers are established that correspond to transitions between the interaction regimes (thermal disintegration and rebound of the droplet). From the practical point of view, the results may be used in studying the formation processes of air–fuel mixture in the combustion chambers.

Maksimov, M. V.;Shernyakov, Yu. M.;Zubov, F. I.;Novikov, I. I.;Gladyshev, A. G.;Karachinsky, L. Ya.;Denisov, D. V.;Rochas, S. S.;Kolodeznyi, E. S.;Egorov, A. Yu.;Zhukov, A. E.

doi: 10.1134/S1063785019060129

Ivanov-Omskii, V. I.;Mynbaev, K. D.;Trapeznikova, I. N.;Andryushchenko, D. A.;Bazhenov, N. L.;Mikhailov, N. N.;Varavin, V. S.;Remesnik, V. G.;Dvoretskii, S. A.;Yakushev, M. V.

doi: 10.1134/S1063785019060099pmid: N/A

Abstract The disordering in cadmium mercury telluride solid solution films grown by molecular beam epitaxy on Si and GaAs substrates has been examined by optical transmission and photoluminescence investigations. The effect of a fundamental decrease in the disordering scale under thermal annealing and possible interplay of the observed phenomena with defects typical of films grown by molecular beam epitaxy are discussed.

Lebedev, A. A.;Nikitina, I. P.;Seredova, N. V.;Poletaev, N. K.;Lebedev, S. P.;Kozlovski, V. V.;Zubov, A. V.

doi: 10.1134/S1063785019060117pmid: N/A

Abstract Photoluminescence (PL) spectra have been studied in 3C-SiC/4H-SiC heterostructures and 3C‑SiC single crystals. It was shown that epitaxial 3C-SiC layers grown on 4H-SiC substrates have a markedly poorer crystal perfection than do 3C-SiC single crystals. It was found that doping with aluminum gives rise to a characteristic PL both in epitaxial layers and in 3C-SiC single crystals. At the same time, the electron irradiation of epitaxial layers does not give rise to defect-related PL, in contrast to what is observed for single crystals. An assumption is made that the twin boundaries existing in epitaxial 3C-SiC layers can serve as getters of radiation defects that are components of donor–acceptor pairs responsible for the “defect-related” PL.

Plotnikova, A. D.;Moskalenko, O. I.

doi: 10.1134/S1063785019060142pmid: N/A

Abstract Specificities of the generalized synchronization mode in unidirectionally coupled delayed oscillators are studied. Four different cases of the interaction of systems characterized by different numbers of positive Lyapunov exponents are considered. It is established that the threshold for the rise of a synchronous mode strongly depends on the degree of chaoticity of interacting systems and the coupling of systems characterized by a different number of positive Lyapunov exponents gives rise to additional synchronization regions.

Ignat’ev, V. K.

doi: 10.1134/S1063785019060075pmid: N/A

Abstract A quantum proof of reciprocity relations for nonlinear nonstationary systems in the magnetic field is obtained in the approximation of the Markovian relaxation.