"Technical Physics Letters"

Kurin, A. F.

doi: 10.1134/1.2001047pmid: N/A

Abstract The phenomenon of the stable motion of charged particles at the electric field antinode of a standing electromagnetic wave is analyzed using the Hill equation derived from the equations of motion. The domains of parameters characterizing the field and charges are determined for the regime of stable oscillations. It is shown that the charged particles remaining at the electric field antinode can be accelerated to relativistic velocities.

Evstrapov, A. A.;Pozdnyakov, A. O.;Gornyi, S. G.;Yudin, K. V.

doi: 10.1134/1.2001048pmid: N/A

Abstract Microchannels in polyimide (PI) have been produced by means of laser ablation (LA). The obtained results confirm the possibility of using the LA technology for the functional structure formation on PI-based microfluidic chips (MFCs). The shape of the channel edge may depend on the thermal properties of PI. This circumstance makes it possible to optimize the process of MFC fabrication by selecting a proper PI and the corresponding LA regime. Optimization of the other characteristics, such as mechanical properties and planarity of the MFCs, requires additional investigations.

Andreev, K. V.;Krasichkov, L. V.

doi: 10.1134/1.2001049pmid: N/A

Abstract Autowave dynamics in a two-dimensional lattice of excitable elements of the FitzHugh-Nagumo type containing topological defects has been studied. It is shown that the core of a spiral wave can drift along a path composed of such defects. The possibility of controlling the motion of spiral waves in excitable and oscillating media is considered.

Akhmadeev, Yu. Kh.;Goncharenko, I. M.;Ivanov, Yu. F.;Koval, N. N.;Schanin, P. M.

doi: 10.1134/1.2001050pmid: N/A

Abstract The process of nitriding at low pressures and temperatures (≤550°C) in hollow-cathode glow discharge plasma was studied for technical-purity titanium of the VT1-0 commercial grade. The diffusion saturation of titanium with nitrogen in plasma with a concentration of n = 1010–1011 cm−3 takes place at an ion current density on the cathode within 1.6–4.0 mA/cm2. It is established that a key role in the process of metal saturation is played by atomic nitrogen. The experiments revealed the formation of a layer of gradient structure with a high microhardness (∼14 GPa) on the surface of nitrided titanium.

Trunov, M. L.;Dub, S. N.;Shmegera, R. S.

doi: 10.1134/1.2001051pmid: N/A

Abstract The photoinduced variation of plasticity (photoplastic effect) in glassy semiconductor films was studied for the first time on a nanoscale level using a nanoindentation technique. It is shown that an increase in Young’s modulus and a decrease in the nanohardness for such films in the initial stage of their exposure to light with a wavelength in the vicinity of the fundamental absorption edge is a characteristic feature of the photomechanical response kinetics. The photoplastic after-effect has been observed, whereby the state of film softening (as compared to the initial dark state) is retained for some time after the light switch-off, and the length of this period is dependent on the conditions of exposure.

Khor’kov, S. V.

doi: 10.1134/1.2001052pmid: N/A

Abstract The nonlinear response of thin metal films textured by periodic inclusions has been studied. The effective nonlinear conductivity exhibits critical behavior, which is determined by the relative “density” of insulating or perfectly conducting inclusions.

Kashtankin, I. A.;Gurin, N. T.

doi: 10.1134/1.2001053pmid: N/A

Abstract A photosensitive negative-differential-resistance (NDR) device has been developed based on two low-power bipolar silicon transistors on a common substrate, with the emitter junction of one transistor shunted by the conducting channel of the other transistor. As the intensity of IR radiation incident on the shunting transistor increases, the peak current in the N-shaped I-U characteristic decreases until it vanishes completely. An increase in the intensity of IR radiation incident on the shunted transistor leads to a significant increase in the peak current.

Mikheev, G. M.;Zonov, R. G.;Obraztsov, A. N.;Volkov, A. P.;Svirko, Yu. P.

doi: 10.1134/1.2001054pmid: N/A

Abstract The phenomenon of optical rectification during pulsed laser irradiation was studied in nanographite films of various thicknesses obtained by plasmachemical deposition on silicon substrates. The amplitude of the optical rectification pulse (ORP) strongly depends on the film thickness h and reaches a maximum at h ∼ 2.5 μm. At a smaller film thickness, the ORP is accompanied by a photoelectric signal of microsecond duration, which arises in the silicon substrate. For the nanographite films with h > 2.5 μm, the ORP is observed in the absence of any signal from the substrate, which allows such films to be used in fast-response detectors of pulsed laser radiation in a broad spectral range.

Latukhina, N. V.;Lebedev, V. M.

doi: 10.1134/1.2001055pmid: N/A

Abstract Elemental composition profiles of the structures comprising the layers of dysprosium oxide (Dy2O3), lutetium oxide (Lu2O3), or silicon oxide (SiO2 with Dy and Lu impurities) on silicon substrates have been studied by means of Rutherford backscattering spectrometry and nuclear reaction analysis. The structures were prepared by high-temperature diffusion in oxygen or air. The results of depth profiling are compared to the concentrations of electrically active impurities in the diffusion layers on silicon, which were determined from measurements of the capacitance-voltage characteristics and the surface resistance and from the data of transmission electron microscopy and X-ray diffraction.

Oreshkin, V. I.;Baksht, R. B.;Labetskii, A. Yu.;Ratakhin, N. A.;Russkikh, A. G.;Chaikovsky, S. A.;Fedyunin, A. V.;Shishlov, A. V.

doi: 10.1134/1.2001056pmid: N/A

Abstract The possibility of creating a high-power X-ray source based on the recombination radiation mechanism has been studied and analyzed. The recombination X-ray radiation from neon, aluminum, and argon was obtained in experiments with plasma liners performed on the GIT-12 setup using a current pulse amplitude of ∼2.5 MA and a leading pulse front width of ∼300 ns. The obtained results show that the recombination mechanism of X-ray generation offers good prospects for the development of a high-power X-ray source with photon energies in the 7–20-keV range.