"Technical Physics Letters"

Maksimov, I. L.;Vodolazov, D. Yu.

doi: 10.1134/1.1262282pmid: N/A

Abstract An investigation was made of the propagation of a normal-state switching wave and the establishment of a resistive domain in thin-film superconducting bridges. It was observed that the nonlinearity of the current-voltage characteristic of the material, using the density of the superconducting condensate as the parameter, strongly influences the characteristics of dissipative structures.

Malakhov, A. N.

doi: 10.1134/1.1262283pmid: N/A

Abstract It is shown that a spatially periodic random field fluctuating rapidly near zero with a fairly small spatial period may substantially accelerate the diffusion of Brownian particles parallel to this field.

Mikhailov, A. I.;Lerner, D. M.

doi: 10.1134/1.1262284pmid: N/A

Abstract Results are presented of a mathematical modeling of the influence of the shape of the cathode “notch” in the semiconductor structure of a Gunn diode on the characteristics of the domain dynamics. It is shown that processes whereby the domain escapes from the notch into the active region and its leading edge approaches the highly doped region near the anode play a major role in the formation of the second harmonic component in the spectrum of the Gunn diode current.

Zubko, S. P.

doi: 10.1134/1.1262285pmid: N/A

Abstract Calculations are made of the parameters of a phenomenological model of the permittivity of bulk and film samples of potassium tantalate as a function of the applied field and temperature. The correlation parameter needed to allow for the influence of the size effect is also calculated. Good agreement is obtained between the theoretical calculations and the experimental results.

Demidovich, V. M.;Demidovich, G. B.;Karib’yants, V. R.;Kozlov, S. N.

doi: 10.1134/1.1262286pmid: N/A

Abstract It is shown that after a porous layer has been formed electrochemically on a silicon surface at elevated anode currents, the silicon-porous-silicon system is in a quasisteady nonequilibrium state from which it may be transferred under the influence of fairly weak adsorption effects.

Shuaibov, A. K.;Shimon, L. L.;Dashchenko, A. I.;Minya, A. I.

doi: 10.1134/1.1262287pmid: N/A

Abstract Results are presented of an investigation of the electrical and optical characteristics of a pulsed transverse discharge ignited in a 54×2.0×0.7 cm volume of an Ar+4%SiH4 mixture. Studies were made of general spectra of the plasma radiation and the temporal and service-life characteristics of the radiation from the degradation products of the silane molecules. This type of discharge is of interest for obtaining porous silicon coatings over large areas.

Muratikov, K. L.;Glazov, A. L.;Rose, D. N.;Dumar, J. E.

doi: 10.1134/1.1262288pmid: N/A

Abstract Photodeflection and photoreflection microscopy have been used to show that residual stresses do not influence the thermophysical parameters of silicon nitride ceramic. It was demonstrated that photoreflection microscopy can provide information on the thermophysical properties of ceramics at the level of individual grains. It was established that the theory of photoacoustic signal formation with a piezoelectric recording method based on the Murnaghan model with allowance for the stress dependence of the thermoelastic coupling coefficient can qualitatively explain these experimental data and can be used to estimate the thermoelastic parameters of the ceramic.

Zharov, A. N.

doi: 10.1134/1.1262289pmid: N/A

Abstract It is shown that unlike the case of a liquid droplet, the critical strength of a uniform electrostatic field required for instability of a gas bubble in a liquid dielectric decreases as the compressibility of the gas in the bubble increases.

Bushuev, V. A.;Sergeev, A. A.

doi: 10.1134/1.1262290pmid: N/A

Abstract The internal structure of materials with a low scattering power and small density gradient was investigated using a new method of phase contrast x-ray introscopy. Model calculations were made of the contrast image using dynamic x-ray diffraction theory. The object of the investigation was a capillary containing a blood clot, which modeled a blood vessel with a thrombus. As a result, it was shown that the new method has distinct advantages over the conventionally used absorption method in obtaining completely satisfactory images.

Leshko, A. Yu.;Lyutetskii, A. V.;Murashova, A. V.;Pikhtin, N. A.;Tarasov, I. S.;Arsent’ev, I. N.;Ber, B. Ya.;Kudryavtsev, Yu. A.;Il’in, Yu. V.;Fetisova, N. V.

doi: 10.1134/1.1262291pmid: N/A

Abstract A methodology has been developed for growing InGaAsP/InP multiwell laser heterostructures by liquid-phase epitaxy. Depth profiling using a secondary ion mass spectrometer was used to investigate the distribution profiles of the composition of multiwell laser heterostructures. Liquid-phase epitaxy was used to fabricate InGaAsP/InP multiwell laser heterostructures with active regions having emission wavelengths of 1.3 and 1.55 μm and their radiative characteristics were studied.