On the validity of the weak-phase and other approximations in the analysis of electron microscope imagesMisell, D L
doi: 10.1088/0022-3727/9/13/006pmid: N/A
The application of approximate methods such as the weak-phase and the weak-phase/weak-amplitude approximations, to the analysis of conventional transmission electron microscope images is examined. The specimen thickness must be respectively less than 5 and 15 nm for stained and unstained biological specimens for the valid application of the weak-phase approximation. These thickness limits can be extended to 10 and 25 nm respectively using the weak-phase/weak-amplitude approximation. The effect of specimen thickness is to place severe restrictions on the interpretation of an image in terms of the specimen structure. The thickness effect becomes increasingly severe as the image resolution improves. Suggestions are made for minimizing experimentally both the effects of specimen thickness and defocus error.
An X-ray diffraction profile analysis of vacuum-evaporated copper films: normal and oblique vapour incidenceHalder, S K; Sen, Suchitra; Gupta, S P Sen
doi: 10.1088/0022-3727/9/13/007pmid: N/A
A detailed study of copper films was made in the thickness range 80-330 nm for the 111, 200, 220, 311 and 222 reflections. Only high concentrations of growth-twin stacking faults have been observed. The line-shift analysis has shown the existence of small lattice parameter changes and appreciable residual stresses, tensile in nature, for the films deposited from an oblique vapour beam. The line-broadening analyses considering multiple-order and single-order ('linlog') reflections have shown the presence of small coherent domain sizes lying in the range 45-175 AA and an appreciable amount of total RMS strain resulting in a density of dislocations rho approximately 1011 cm-3. The effective coherent domain size De and RMS strain values obtained from the 'linlog' method show considerable anisotropy and the average ratio (De)111/(De)100 approximately 2.0 signifies a fairly large contribution of stacking faults to the domain size broadening. For all the films more than 100 nm thick the 'apparent' orientation factor R approximately=3.0-4.0 indicates a preferential orientation of (111) planes parallel to the film surface.
Trap distribution in ZnIn2S4 from photoconductivity analysisSerpi, A
doi: 10.1088/0022-3727/9/13/008pmid: N/A
Photoconductivity, quenching, thermally stimulated current and decay characteristics are studied in ZnIn2S4 single crystals. Evidence is obtained for the presence of three impurity levels taking part in the photoconductivity process. Optical quenching is attributed to a sensitization centre, which acts as a competitive recombination level. An exponential distribution of electron traps is revealed both by pulsed photoconductivity and by thermocurrent analysis. The two experimental techniques accordingly provide the value of 70 meV/decade for the trap distribution. Some aspects of the nature of the impurity centres are examined.
Estimation of the number of domain walls during flux reversal in 50% Ni-Fe tape coresSakaki, Y; Anayama, T
doi: 10.1088/0022-3727/9/13/010pmid: N/A
Describes a method to estimate the number of domain walls during flux reversal in 50% Ni-Fe tape-wound cores on the assumption that the induced voltage of the magnetic core under the application of an MMF is a function of the number of walls participating in flux reversal. The study shows that the abrupt change of total flux reversal time in the intermediate-field region, where the applied field intensity is several times larger than the coercive force, is attributable to the increase in the number of domain walls with increasing applied field. The flux reversal time calculated on the basis of the estimated number of domain walls and the equation of wall motion agrees well with the observed one.