Access the full text.
Sign up today, get DeepDyve free for 14 days.
Loading next page...
/lp/wiley/direct-inversion-of-interfacial-reflectivity-data-using-the-patterson-JcIcZriKiS
References (12)
-
Q. Tong, U. Gösele (1998)
SemiConductor Wafer Bonding: Science and Technology -
J. Glusker, M. Lewis, M. Rossi (1994)
Crystal Structure Analysis for Chemists and Biologists -
F. Rieutord, J. Eymery, F. Fournel, D. Buttard, R. Oeser, O. Plantevin, H. Moriceau, B. Aspar (2001)
High-energy x-ray reflectivity of buried interfaces created by wafer bondingPhysical Review B, 63
-
J. Dabrowski, H. Müssig (2000)
Silicon Surfaces and Formation of Interfaces: Basic Science in the Industrial World -
S. Kosowsky, P. Pershan, K. Krisch, J. Bevk, Martin Green, D. Brasen, L. Feldman, P. Roy (1997)
Evidence of Annealing Effects on a High-Density Si/SiO2 Interfacial LayerApplied Physics Letters, 70
-
A. Ourmazd, D. Taylor, J. Rentschler, J. Bevk (1987)
Si-->SiO 2 transformation: Interfacial structure and mechanismPhysical Review Letters, 59
-
(1993)
Silicon Surfaces and Formation -
(1999)
X-ray and Neutron Re¯ectivity: Principles and Applications -
T. Rabedeau, I. Tidswell, P. Pershan, J. Bevk, B. Freer (1991)
X‐ray scattering studies of the SiO2/Si(001) interfacial structureApplied Physics Letters, 59
-
S. Iyer, A. Auberton-Herve (2002)
Silicon Wafer Bonding Technology for VLSI and MEMS Applications -
J. Als-Nielsen, D. McMorrow (2001)
Elements of Modern X-ray Physics -
U. Gösele, O.-Y. Tong (1990)
Semiconductor wafer bondingAnnual Review of Materials Science, 28
- Publisher
- Wiley
- Copyright
- Copyright © 2003 Wiley Subscription Services, Inc., A Wiley Company
- ISSN
- 1600-5767
- eISSN
- 1600-5767
- DOI
- 10.1107/S0021889803016649
- Publisher site
- See Article on Publisher Site
Abstract
It is shown here that the interfacial profile between two bonded wafers can be directly determined using X‐ray reflectivity without resorting to standard model‐fitting of the data. The phase problem inherent to any structure determination by scattering technique is solved in this case using a known silicon/silicon oxide interface, which acts as a phase reference for the reflected signals.
Journal
Journal of Applied Crystallography – Wiley
Published: Dec 1, 2003