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JOURNAL OF MATERIALS SCIENCE LETTERS 18 (1999) 2025 – 2028 Zr/Ti ratio dependence of the deformation in the hysteresis loop of Pb(Zr,Ti)O thin films EUN GU LEE, JONG KOOK LEE Department of Materials Engineering, Factory Automation Research Center for Parts of Vehicles, Chosun University, Kwangju 501-759, Korea E-mail: eglee@ic21a.chosun.ac.kr JI-YOUNG KIM, JAE GAB LEE Department of Metallurgical Engineering, Kookmin University, Seoul 136-702, Korea HYUN M. JANG Department of Materials Engineering, Pohang University, Pohang 790-784, Korea SUN JAE KIM Advanced Nuclear Materials Development Team, Korea Atomic Energy Research Institute, Taejeon 305-353, Korea Current interest in ferroelectric thin films stems from ide. The precursors with 16% excess lead were syn- the numerous potential device applications for thin thesized by distilling and reflux in butoxyethanol. The films of ferroelectric materials that utilize their unique PZT films, 200 nm thick, were prepared using a sol-gel dielectric, pyroelectric, electro-optic, acousto-optic, method on the substrate of Pt/Ti/SiO /Si layers. The and piezo-electric properties. One of the major driving thicknesses of the Pt and Ti were 100 and 10 nm, re- forces in this field is the potential application of fer- spectively. Prior to spin coating the PZT film, the Pt roelectric thin films for both
Journal of Materials Science Letters – Springer Journals
Published: Sep 29, 2004
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