Access the full text.
Sign up today, get DeepDyve free for 14 days.
J. Black, E. Conwell, L. Seigle, C. Spencer (1957)
Electrical and optical properties of some M2v−bN3vi−b semiconductorsJournal of Physics and Chemistry of Solids, 2
P. Eklund, A. Mabatah (1977)
Thermoelectric power measurements using analog subtractionReview of Scientific Instruments, 48
R. Ionescu, J. Jaklovszky, N. Nistor, A. Chiculiţa (1975)
Grain size effects on thermoelectrical properties of sintered solid solutions based on Bi2Te3Physica Status Solidi (a), 27
D. Rowe (1995)
CRC Handbook of Thermoelectrics
宏昌 海部, 亮一 坂田, 幸宏 磯田, 勲夫 西田 (1989)
n型Bi2Te2.85Se0.15焼結体の熱電特性Journal of The Japan Institute of Metals, 53
D. Greenaway, G. Harbeke (1965)
Band structure of bismuth telluride, bismuth selenide and their respective alloysSolid State Communications, 26
L. Bennett, J. Wiese (1961)
Effects of Doping Additions on the Thermoelectric Properties of the Intrinsic Semiconductor Bi2Te2.1Se0.9Journal of Applied Physics, 32
T. Harman, J. Cahn, M. Logan (1959)
Measurement of Thermal Conductivity by Utilization of the Peltier EffectJournal of Applied Physics, 30
H. Goldsmid (1964)
Thermoelectric Refrigeration
H. Kaibe, Y. Tanaka, M. Sakata, I. Nishida (1989)
Anisotropic galvanomagnetic and thermoelectric properties of n-type Bi2Te3 single crystal with the composition of a useful thermoelectric cooling materialJournal of Physics and Chemistry of Solids, 50
C. Champness, W. Muir, P. Chiang (1967)
THERMOELECTRIC PROPERTIES OF n-TYPE Bi2Te3–Bi2Se3 ALLOYSCanadian Journal of Physics, 45
C. Satterthwaite, R. Ure (1957)
Electrical and Thermal Properties of Bi 2 Te 3Physical Review, 108
A. Ioffe, L. Stil’bans, E. Iordanishvili, T. Stavitskaya, A. Gelbtuch, G. Vineyard (1957)
Semiconductor Thermoelements and Thermoelectric Cooling
The temperature dependence of the Hall mobility, Seebeck coefficient, electrical resistivity, thermal conductivity, and figure-of-merit of the SbI3 and CuBr-doped 85% Bi2Te3-15% Bi2Se3 single crystals have been characterized at temperatures ranging from 77 K to 600 K. The scattering parameter in 85% Bi2Te3-15% Bi2Se3 single crystal was determined as 0.1 from the temperature dependence of the carrier mobility. With increasing the amount of Sbl3 or CuBr doping, the Seebeck coefficient of 85% Bi2Te3-15% Bi2Se3 decreased and the temperature at which the Seebeck coefficient shows a maximum shifted to higher temperature. Compared to the Sbl3-doped specimens, the CuBr-doped single crystals exhibited higher (m* / m0)3/2 μc, implying that CuBr is a more effective dopant to improve the material factor and thus the figure-of-merit of 85% Bi2Te3-15% Bi2Se3. The maximum figure-of-merit of 2.0 × 10−3/K and 2.2 × 10−3/K was obtained for 0.1 wt % Sbl3-doped specimen and 0.03 wt % CuBr-doped specimen, respectively.
Journal of Materials Science – Springer Journals
Published: Sep 29, 2004
Read and print from thousands of top scholarly journals.
Already have an account? Log in
Bookmark this article. You can see your Bookmarks on your DeepDyve Library.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Copy and paste the desired citation format or use the link below to download a file formatted for EndNote
Access the full text.
Sign up today, get DeepDyve free for 14 days.
All DeepDyve websites use cookies to improve your online experience. They were placed on your computer when you launched this website. You can change your cookie settings through your browser.