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K. Hess, P. Dapkus, H. Manasevit, T. Low, B. Skromme, G. Stillman (1982)
An analytical evaluation of GaAs grown with commercial and repurified trimethylgalliumJournal of Electronic Materials, 11
T. Hartmann, M. Lampalzer, W. Stolz, K. Megges, J. Lorberth, P. Klar, W. Heimbrodt (2000)
Optical characterisation of MOVPE-grown Ga1−xMnxAs semimagnetic semiconductor layersThin Solid Films, 364
B. Skromme, T. Low, T. Roth, G. Stillman, J. Kennedy, J. Abrokwah (1983)
Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPEJournal of Electronic Materials, 12
GaMnAs/GaAs was obtained with mass-analyzed low energy dual ion beam depostion technique with Mn ion energy of 1000 eV and a dose of 1.5 × 1018 Mn+/cm2 at the substrate temperature of 400°C and was annealed at 840°C. X-ray diffraction spectra showed that Ga5.2Mn, Ga5Mn8, α-Mn and Mn3Ga were obtained in the as-grown sample. After annealing Mn3Ga and α-Mn disappeared, Ga5Mn8 tended to disappear, Ga5.2Mn crystallized better and new phase of Mn2As was generated. The photoluminescence spectra of the as-grown sample showed that the 1.5042 eV GaAs exciton peak, 1.4875 eV peak involving a carbon acceptor and a broad band near 1.35 eV. After annealing at 840°C, the 1.5042 eV peak and 1.4875 eV shifted to 1.5065 and 1.4894 eV, respectively, and the photoluminescence intensity of the 1.35 eV band increased greatly.
Journal of Materials Science – Springer Journals
Published: Oct 2, 2004
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