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RF power dependence of refractive index of room temperature sputtered ZnO:Al thin films

RF power dependence of refractive index of room temperature sputtered ZnO:Al thin films The deposition power dependence of visible transmittance and refractive index of room temperature-deposited ZnO:Al thin films by RF magnetron sputtering has been studied. All films exhibited high visible transmittance and near-complete UV absorption. The refractive index of the films decreased continuously with an increase in the RF power at all photon energies in the visible and near-IR region, which has been partially attributed to the decreased packing density of the films. For each film, the refractive index exhibited strong frequency dispersion in the weak-absorption region. The origin of optical dispersion at different RF power has been discussed in the light of a single-oscillator model. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Physics A: Materials Science Processing Springer Journals

RF power dependence of refractive index of room temperature sputtered ZnO:Al thin films

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References (1)

Publisher
Springer Journals
Copyright
Copyright © 2013 by Springer-Verlag Berlin Heidelberg
Subject
Physics; Condensed Matter Physics; Optical and Electronic Materials; Nanotechnology; Characterization and Evaluation of Materials; Surfaces and Interfaces, Thin Films; Operating Procedures, Materials Treatment
ISSN
0947-8396
eISSN
1432-0630
DOI
10.1007/s00339-013-7831-z
Publisher site
See Article on Publisher Site

Abstract

The deposition power dependence of visible transmittance and refractive index of room temperature-deposited ZnO:Al thin films by RF magnetron sputtering has been studied. All films exhibited high visible transmittance and near-complete UV absorption. The refractive index of the films decreased continuously with an increase in the RF power at all photon energies in the visible and near-IR region, which has been partially attributed to the decreased packing density of the films. For each film, the refractive index exhibited strong frequency dispersion in the weak-absorption region. The origin of optical dispersion at different RF power has been discussed in the light of a single-oscillator model.

Journal

Applied Physics A: Materials Science ProcessingSpringer Journals

Published: Jul 14, 2013

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