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Processing and microstructural characterisation of RBSiC-TaSi2 composites

Processing and microstructural characterisation of RBSiC-TaSi2 composites Reaction bonded silicon carbide (RBSiC) ceramics typically contain 10 vol% silicon inherent to the reaction bonding process. However, the relatively low melting point (1410°C) of the silicon phase is a limiting factor in the high temperature use of RBSiC materials. The application temperature can potentially be enhanced by replacing the silicon with more refractory metal disilicide phases. In this paper we report the infiltration of SiC-graphite compacts with alloyed Si-Ta melts in an attempt to precipitate TaSi2 (Tm=2040°C) in place of the residual silicon. High density RBSiC-TaSi2 ceramics with virtually no porosity were readily produced, but subsequent XRD and SEM examination revealed that the silicon phase was not completely removed. In addition, the materials possessed complex, inhomogeneous microstructures and were susceptible to various types of crack formation phenomena. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science Springer Journals

Processing and microstructural characterisation of RBSiC-TaSi2 composites

SIMNER, S.; XIAO†, P.; Derby, B.
Journal of Materials Science , Volume 33 (23) – Sep 29, 2004
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References (6)

Publisher
Springer Journals
Copyright
Copyright © 1998 by Kluwer Academic Publishers
Subject
Materials Science; Materials Science, general; Characterization and Evaluation of Materials; Polymer Sciences; Continuum Mechanics and Mechanics of Materials; Crystallography and Scattering Methods; Classical Mechanics
ISSN
0022-2461
eISSN
1573-4803
DOI
10.1023/A:1004447727931
Publisher site
See Article on Publisher Site

Abstract

Reaction bonded silicon carbide (RBSiC) ceramics typically contain 10 vol% silicon inherent to the reaction bonding process. However, the relatively low melting point (1410°C) of the silicon phase is a limiting factor in the high temperature use of RBSiC materials. The application temperature can potentially be enhanced by replacing the silicon with more refractory metal disilicide phases. In this paper we report the infiltration of SiC-graphite compacts with alloyed Si-Ta melts in an attempt to precipitate TaSi2 (Tm=2040°C) in place of the residual silicon. High density RBSiC-TaSi2 ceramics with virtually no porosity were readily produced, but subsequent XRD and SEM examination revealed that the silicon phase was not completely removed. In addition, the materials possessed complex, inhomogeneous microstructures and were susceptible to various types of crack formation phenomena.

Journal

Journal of Materials Science – Springer Journals

Published: Sep 29, 2004

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