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References (23)
-
G. Pereira, A. Lachenwitzer, M. Nicholls, M. Kasrai, P. Norton, G. Stasio (2005)
Chemical characterization and nanomechanical properties of antiwear films fabricated from ZDDP on a near hypereutectic Al–Si alloyTribology Letters, 18
-
S. Limpijumnong, Shengbai Zhang, S. Wei, C. Park (2004)
Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide.Physical review letters, 92 15
-
D. Look, G. Renlund, R. Burgener, J. Sizelove (2004)
As-doped p-type ZnO produced by an evaporation∕sputtering processApplied Physics Letters, 85
-
Yin, Kasrai, Bancroft, Tan, Feng (1995)
X-ray-absorption spectroscopic studies of sodium polyphosphate glasses.Physical review. B, Condensed matter, 51 2
-
Jingguang Chen (1998)
NEXAFS investigations of transition metal oxides, nitrides, carbides, sulfides and other interstitial compoundsSurface Science Reports, 30
-
K. Asokan, J. Jan, J. Chiou, W. Pong, M. Tsai, H. Shih, H. Chen, H. Hsueh, C. Chuang, Y. Chang, Yang-Yuan Chen, I. Lin (2001)
Electronic structures of Ba1−xCaxTiO3 studied by x-ray absorption spectroscopy and theoretical calculationJournal of Physics: Condensed Matter, 13
-
Y. Heo, S. Park, K. Ip, S. Pearton, D. Norton (2003)
Transport properties of phosphorus-doped ZnO thin filmsApplied Physics Letters, 83
-
V. Vaithianathan, J. Moon, C. Chang, K. Asokan, S. Kim (2006)
Electronic structure of P-doped ZnO films with p-type conductivity.Journal of nanoscience and nanotechnology, 6 11
-
Z. Yu, H. Gong, Ping Wu (2005)
Dopant Sources Choice for Formation of p-Type ZnO: Phosphorus Compound SourcesChemistry of Materials, 17
-
J. Chiou, J. Jan, H. Tsai, C. Bao, W. Pong, M. Tsai, I. Hong, R. Klauser, J. Lee, Jhao-Ying Wu, S. Liu (2004)
Electronic structure of ZnO nanorods studied by angle-dependent x-ray absorption spectroscopy and scanning photoelectron microscopyApplied Physics Letters, 84
-
V. Vaithianathan, Byung-Teak Lee, S. Kim (2005)
Preparation of As-doped p-type ZnO films using a Zn3As2∕ZnO target with pulsed laser depositionApplied Physics Letters, 86
-
A. Tsukazaki, A. Ohtomo, T. Onuma, Makoto Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, M. Kawasaki (2004)
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnONature Materials, 4
-
T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, Y. Hatanaka (2002)
p‐Type ZnO Layer Formation by Excimer Laser DopingPhysica Status Solidi B-basic Solid State Physics, 229
-
Peng Wang, N. Chen, Z. Yin, Fei Yang, C. Peng, Ruixuan Dai, Y. Bai (2006)
As-doped p-type ZnO films by sputtering and thermal diffusion processJournal of Applied Physics, 100
-
V. Vaithianathan, Byung-Teak Lee, S. Kim (2005)
Pulsed-laser-deposited p-type ZnO films with phosphorus dopingJournal of Applied Physics, 98
-
C. Dong, C. Persson, L. Vayssieres, A. Augustsson, T. Schmitt, M. Mattesini, R. Ahuja, C. Chang, Jinghua Guo (2004)
Electronic structure of nanostructured ZnO from x-ray absorption and emission spectroscopy and the local density approximationPhysical Review B, 70
-
Ü. Özgür, Y. Alivov, C. Liu, A. Teke, M. Reshchikov, S. Doğan, V. Avrutin, Sang-Jun Cho, H. Morkoç (2005)
A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICESJournal of Applied Physics, 98
-
S. Limpijumnong, M. Smith, Shengbai Zhang (2006)
Characterization of As-Doped p-Type ZnO by X-ray Absorption Near-Edge Structure Spectroscopy: TheoryApplied Physics Letters, 89
-
Woojin Lee, Joongoo Kang, K. Chang (2006)
Defect properties and p -type doping efficiency in phosphorus-doped ZnOPhysical Review B, 73
-
Y. Nakano, T. Morikawa, T. Ohwaki, Y. Taga (2006)
Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 filmsApplied Physics Letters, 88
-
D. Look, D. Reynolds, C. Litton, R. Jones, D. Eason, G. Cantwell (2002)
Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxyApplied Physics Letters, 81
-
Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Doğan, V. Avrutin, S.J. Cho, H. Morkoç (2005)
Ü. ÖzgürJ. Appl. Phys., 98
-
Kyoung-Kok Kim, Hyun-sik Kim, D. Hwang, Jae-Hong Lim, Seong-Ju Park (2003)
Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopantApplied Physics Letters, 83
- Publisher
- Springer Journals
- Copyright
- Copyright © 2008 by Springer-Verlag
- Subject
- Physics; Condensed Matter Physics; Optical and Electronic Materials; Nanotechnology; Characterization and Evaluation of Materials; Surfaces and Interfaces, Thin Films; Operating Procedures, Materials Treatment
- ISSN
- 0947-8396
- eISSN
- 1432-0630
- DOI
- 10.1007/s00339-008-4883-6
- Publisher site
- See Article on Publisher Site
Abstract
Using X-ray absorption near-edge structure spectroscopy (XANES), we investigate the local electronic structure of phosphorus (P) and its chemical valence in laser-ablated n-type (as-grown), and p-type (annealed) P-doped ZnO thin films. Both the P L 1- and P L 2,3-edge XANES spectra reveal that the valence state of P is 3− (P3−) in the p-type as well as in the n-type P-doped ZnO. However, the peak intensity is stronger in the former than that in the latter, suggesting that P replaces O (O2− sites with the P3−) after rapid thermal annealing. The Zn and O K-edges XANES spectra consistently demonstrate that, in the p-type state, P ions substitutionally occupy O sites in the ZnO lattice.
Journal
Applied Physics A: Materials Science Processing – Springer Journals
Published: Sep 13, 2008