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Formation of Si nano-structures by O2 flow during deposition

Formation of Si nano-structures by O2 flow during deposition JOURNAL OF MATERIALS SCIENCE LETTERS 19 2000 947 – 949 Formation of Si nano-structures by O flow during deposition KYOUNG-HWAN KOO, HYOUNG GIN NAM Department of Electronic Engineering, Sun Moon University, Asan, 336-840, Republic of Korea E-mail: hgnam@omega.sunmoon.ac.kr In modern microelectronics progress has been made ber and each gas line were purged with N for 5 min toward low power ultra large-scale integration (ULSI), prior to Si deposition. The deposited films were an- and nano-structure devices such as single electron tran- nealed at 560 C for 60 min in an oxidizing ambient sistor (SET) have attracted much interest. In particu- generated by constantly flowing N through H O bub- 2 2 lar, SET has many promising applications, which in- bler kept at 95 C. Rapid thermal annealing (RTA) was clude radio-frequency SET [1], quantum well laser [2] subsequently performed at 700 C for 1 min in N am- made by a thin semiconductor embedded between dif- bient at the pressure of 300 mtorr. ferent materials, single electron memory [3] utilizing The structural as well as morphological analyses the changes in threshold voltage induced by Coulomb were carried out with transmission electron micro- blockade effect [4], and logic circuits [5]. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science Letters Springer Journals

Formation of Si nano-structures by O2 flow during deposition

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References (6)

Publisher
Springer Journals
Copyright
Copyright © 2000 by Kluwer Academic Publishers
Subject
Materials Science; Characterization and Evaluation of Materials; Industrial Chemistry/Chemical Engineering; Polymer Sciences; Classical Mechanics
ISSN
0261-8028
eISSN
1573-4811
DOI
10.1023/A:1006708003291
Publisher site
See Article on Publisher Site

Abstract

JOURNAL OF MATERIALS SCIENCE LETTERS 19 2000 947 – 949 Formation of Si nano-structures by O flow during deposition KYOUNG-HWAN KOO, HYOUNG GIN NAM Department of Electronic Engineering, Sun Moon University, Asan, 336-840, Republic of Korea E-mail: hgnam@omega.sunmoon.ac.kr In modern microelectronics progress has been made ber and each gas line were purged with N for 5 min toward low power ultra large-scale integration (ULSI), prior to Si deposition. The deposited films were an- and nano-structure devices such as single electron tran- nealed at 560 C for 60 min in an oxidizing ambient sistor (SET) have attracted much interest. In particu- generated by constantly flowing N through H O bub- 2 2 lar, SET has many promising applications, which in- bler kept at 95 C. Rapid thermal annealing (RTA) was clude radio-frequency SET [1], quantum well laser [2] subsequently performed at 700 C for 1 min in N am- made by a thin semiconductor embedded between dif- bient at the pressure of 300 mtorr. ferent materials, single electron memory [3] utilizing The structural as well as morphological analyses the changes in threshold voltage induced by Coulomb were carried out with transmission electron micro- blockade effect [4], and logic circuits [5].

Journal

Journal of Materials Science Letters – Springer Journals

Published: Oct 6, 2004

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