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Formation of a system of InGaAs quantum wires in a gallium arsenide matrix

Formation of a system of InGaAs quantum wires in a gallium arsenide matrix The formation of a system of one-dimensional quantum conductors in porous multilayer In x Ga 1− x As/GaAs structures with a two-dimensional charge-carrier gas in the In x Ga 1− x As layers is discussed. The transition from the single-crystalline to porous matrix is studied with scanning atomic force microcopy. A decrease in the dimensionality of the electron-hole gas in the objects, i.e., a transition from the two-dimensional to a one-dimensional system, is established by analyzing the dependences of the position and width of a spectral line in the photoluminescence spectra on the etching time. Both multilayer periodic superlattices and a structure with a single In x Ga 1− x As layer located near the surface of gallium arsenide are studied. The electrophysical characteristics of electrons in the porous superlattices are measured as functions of temperature. They confirm the formation of a new structure and indicate a change in the mechanism of electron scattering in the quasi-one-dimensional transport channels formed in the system. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physics of the Solid State Springer Journals

Formation of a system of InGaAs quantum wires in a gallium arsenide matrix

Physics of the Solid State , Volume 46 (5) – May 1, 2004

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References (5)

Publisher
Springer Journals
Copyright
Copyright © 2004 by MAIK "Nauka/Interperiodica"
Subject
Physics; Solid State Physics and Spectroscopy
ISSN
1063-7834
eISSN
1090-6460
DOI
10.1134/1.1744974
Publisher site
See Article on Publisher Site

Abstract

The formation of a system of one-dimensional quantum conductors in porous multilayer In x Ga 1− x As/GaAs structures with a two-dimensional charge-carrier gas in the In x Ga 1− x As layers is discussed. The transition from the single-crystalline to porous matrix is studied with scanning atomic force microcopy. A decrease in the dimensionality of the electron-hole gas in the objects, i.e., a transition from the two-dimensional to a one-dimensional system, is established by analyzing the dependences of the position and width of a spectral line in the photoluminescence spectra on the etching time. Both multilayer periodic superlattices and a structure with a single In x Ga 1− x As layer located near the surface of gallium arsenide are studied. The electrophysical characteristics of electrons in the porous superlattices are measured as functions of temperature. They confirm the formation of a new structure and indicate a change in the mechanism of electron scattering in the quasi-one-dimensional transport channels formed in the system.

Journal

Physics of the Solid StateSpringer Journals

Published: May 1, 2004

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