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J. Voit (1995)
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L. Orlov, N. Ivina, Y. Drozdov, N. Alyabina (2002)
Elastic stress relaxation in buffer layers based on porous strained InGaAs/GaAs superlatticesTechnical Physics Letters, 28
D. Yu, Y. Xing, Q. Hang, H. Yan, Jun Xu, Z. Xi, S. Feng (2001)
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L. Orlov, N. Ivina, N. Alyabina, B. Zvonkov, E. Demidov (2003)
InGaAs/GaAs porous superlattice as new material for quantum electronicsPhysica Status Solidi (c)
F. Haldane (1981)
Luttinger liquid theory of one-dimensional quantum fluids. I. Properties of the Luttinger model and their extension to the general 1D interacting spinless Fermi gas
The formation of a system of one-dimensional quantum conductors in porous multilayer In x Ga 1− x As/GaAs structures with a two-dimensional charge-carrier gas in the In x Ga 1− x As layers is discussed. The transition from the single-crystalline to porous matrix is studied with scanning atomic force microcopy. A decrease in the dimensionality of the electron-hole gas in the objects, i.e., a transition from the two-dimensional to a one-dimensional system, is established by analyzing the dependences of the position and width of a spectral line in the photoluminescence spectra on the etching time. Both multilayer periodic superlattices and a structure with a single In x Ga 1− x As layer located near the surface of gallium arsenide are studied. The electrophysical characteristics of electrons in the porous superlattices are measured as functions of temperature. They confirm the formation of a new structure and indicate a change in the mechanism of electron scattering in the quasi-one-dimensional transport channels formed in the system.
Physics of the Solid State – Springer Journals
Published: May 1, 2004
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