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The effects of a thin film dopant precursor on the structure and properties of femtosecond-laser irradiated silicon

The effects of a thin film dopant precursor on the structure and properties of femtosecond-laser... Femtosecond (fs) laser irradiation of a silicon substrate coated with a thin film is a flexible approach to producing metastable alloys with unique properties, including near-unity sub-band gap absorptance extending into the infrared. However, dopant incorporation from a thin film during fs-laser irradiation is not well understood. We study the thin film femtosecond-laser doping process through optical and structural characterization of silicon fs-laser doped using a selenium thin film, and compare the resulting microstructure and dopant distribution to fs-laser doping with sulfur from a gaseous precursor. We show that a thin film dopant precursor significantly changes the laser-material interactions, modifying both the surface structuring and dopant incorporation processes and in turn affecting p–n diode behavior. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Physics A: Materials Science Processing Springer Journals

The effects of a thin film dopant precursor on the structure and properties of femtosecond-laser irradiated silicon

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References (16)

Publisher
Springer Journals
Copyright
Copyright © 2011 by Springer-Verlag
Subject
Physics; Surfaces and Interfaces, Thin Films; Operating Procedures, Materials Treatment; Characterization and Evaluation of Materials; Optical and Electronic Materials; Nanotechnology; Condensed Matter Physics
ISSN
0947-8396
eISSN
1432-0630
DOI
10.1007/s00339-011-6651-2
Publisher site
See Article on Publisher Site

Abstract

Femtosecond (fs) laser irradiation of a silicon substrate coated with a thin film is a flexible approach to producing metastable alloys with unique properties, including near-unity sub-band gap absorptance extending into the infrared. However, dopant incorporation from a thin film during fs-laser irradiation is not well understood. We study the thin film femtosecond-laser doping process through optical and structural characterization of silicon fs-laser doped using a selenium thin film, and compare the resulting microstructure and dopant distribution to fs-laser doping with sulfur from a gaseous precursor. We show that a thin film dopant precursor significantly changes the laser-material interactions, modifying both the surface structuring and dopant incorporation processes and in turn affecting p–n diode behavior.

Journal

Applied Physics A: Materials Science ProcessingSpringer Journals

Published: Oct 28, 2011

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