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Double-patterning requirements for optical lithography and prospects for optical extension without double patterning

Double-patterning requirements for optical lithography and prospects for optical extension... Double patterning (DP) has now become a fixture on the development roadmaps of many device manufacturers for half pitches of 32 nm and beyond. Depending on the device feature, different types of DP and double exposure (DE) are being considered. This paper focuses on the requirements of the most complex forms of DP, pitch-splitting (where line density is doubled through two exposures) and spacer processes (where a deposition process is used to achieve the final pattern). Budgets for critical dimension uniformity and overlay are presented along with tool and process requirements to achieve these budgets. Experimental results showing 45- nm lines and spaces using dry ArF lithography with a k 1 factor of 0.20 are presented to highlight some of the challenges. Finally, alternatives to DP are presented. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Micro/Nanolithography, MEMS and MOEMS SPIE

Double-patterning requirements for optical lithography and prospects for optical extension without double patterning

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References (8)

Publisher
SPIE
Copyright
Copyright © 2009 Society of Photo-Optical Instrumentation Engineers
ISSN
1932-5150
eISSN
1932-5134
DOI
10.1117/1.3023077
Publisher site
See Article on Publisher Site

Abstract

Double patterning (DP) has now become a fixture on the development roadmaps of many device manufacturers for half pitches of 32 nm and beyond. Depending on the device feature, different types of DP and double exposure (DE) are being considered. This paper focuses on the requirements of the most complex forms of DP, pitch-splitting (where line density is doubled through two exposures) and spacer processes (where a deposition process is used to achieve the final pattern). Budgets for critical dimension uniformity and overlay are presented along with tool and process requirements to achieve these budgets. Experimental results showing 45- nm lines and spaces using dry ArF lithography with a k 1 factor of 0.20 are presented to highlight some of the challenges. Finally, alternatives to DP are presented.

Journal

Journal of Micro/Nanolithography, MEMS and MOEMS – SPIE

Published: Jan 1, 2009

Keywords: double patterning; CD uniformity; overlay; 32-nm node; exposure tool budget

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