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Pendellosung effects as a tool for examining minute strains with a triple-crystal X-ray spectrometer

Pendellosung effects as a tool for examining minute strains with a triple-crystal X-ray spectrometer

Abstract

Plane-wave Pendellosung effects are shown to be effective and very sensitive for analyzing minute strains in silicon crystals with dimensions normally used for practical applications. In a triple-crystal silicon X-ray spectrometer with an angular beam divergence of less than 0.1" the Pendellosung effect is very pronounced for sample thicknesses up to 1.2 mm. Strain fields are shown for silicon crystals implanted with 60 keV phosphorus ions for doses down to 1013 ion cm-2 and the limit of resolution is one order of magnitude less.
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