Solar Energy Materials & Solar Cells 59 (1999) 349}353
Initial results of CdS/CuInTe
formed by #ash evaporation
K. El Assali*, M. Boustani, T. Bekkay, A. Khiara, A. Outzourhit,
Laboratoire de Physique des Solides et des Couches Minces, Departement de Physique, Faculte& des Sciences
Semlalia, BP: 2390 Marrakech, Morocco
Received 20 August 1998; received in revised form 17 December 1998
thin "lms is one of the most attractive semiconductors for solar cells applica-
tions, since its direct band gap energy (Eg+1 eV) is suitable as an absorber in photovoltaic
conversion. In this letter the CuInTe
thin "lms are prepared by #ash evaporation technique.
X-ray di!raction measurements on the as-deposited CuInTe
"lm showed that these "lms
consist mainly of the chalcopyrite phase. The junction formation in the n-CdS/p-CuInTe
has been investigated using current}voltage (I}<) and capacitance-voltage (C}<) measure-
ments. 1999 Elsevier Science B.V. All rights reserved.
Keywords: CdS; CuInTe
; Thin "lms; Ternary chalcopyrite; Flash evaporation; Heterojunction
Recently, there has been a renewed interest in the I}III}VI
ductors, due to their energy gaps and absorption coe$cient in photovoltaic applica-
tions, light-emitting diodes and non-linear optics [1}4].
thin "lms is one of the most important semiconductors for
solar cell applications, since its direct band gap (E
"0.96 eV) is close to the proper
value for an absorber in the photovoltaic conversion.
In the present paper, we report the results obtained on CdS/CuInTe
tion, where the CdS layer was prepared onto molybdenum substrates by chemical
* Corresponding authro. Fax: #212-4-44-6626.
0927-0248/99/$ - see front matter 1999 Elsevier Science B.V. All rights reserved.
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