Efficient Page Caching Algorithm with Prediction and Migration for a Hybrid Main Memory Hyunchul Seok, Youngwoo Park, Ki-Woong Park, and Kyu Ho Park KAIST Daejeon, Korea {hcseok, ywpark, woongbak}@core.kaist.ac.kr and kpark@ee.kaist.ac.kr ABSTRACT Emerging next generation memories, NVRAMs, such as Phasechange RAM (PRAM), Ferroelectric RAM (FRAM), and Magnetic RAM (MRAM) are rapidly becoming promising candidates for large scale main memory because of their high density and low power consumption. Many researchers have attempted to construct a main memory with NVRAMs, in order to make up for the limits of NVRAMs. However, we find that the preexisting page caching algorithms, such as LRU, LIRS, and CLOCK-Pro, are often sub-optimal for NVRAMs due to its DRAM-oriented design including uniform access latency and unlimited endurance. Consequently, the algorithms cannot be directly adapted to the hybrid main memory architecture with PRAM. To mitigate this design limitation, we propose a new page caching algorithm for the hybrid main memory. It is designed to overcome the long latency and low endurance of PRAM. On the basis of the LRU replacement algorithm, we propose a prediction of page access pattern and migration schemes to maintain write-bound access pages to DRAM. The experiment results have convinced us
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