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The surface recombination current with an ideality factor of unity was clearly observed in AlGaAs / GaAs abrupt heterojunction bipolar transistors (HBTs) with the uniform base structure ...
The influence of the emitter layer structure on the current -gain emitter-size effect in AlGaAs / GaAs HBTs is investigated. Three types of HBTs were fabricated and the recombination current per unit ...
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