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Threshold Energy for Electron-Hole Pair-Production by Electrons in Silicon

Threshold Energy for Electron-Hole Pair-Production by Electrons in Silicon Measurements have been made of the reverse bias required for the onset of multiplication in silicon p - n junctions of various widths. A value of 2.25±0.10 ev is arrived at for the threshold energy for electron-hole pair-production by energetic electrons. There is apparently a slight variation of the threshold energy with crystallographic direction; the directions 100, 110, 111, are listed in ascending order of threshold energies. The ionization rate for electrons is greater than for holes. The maximum phonon drag opposing the acceleration of an electron up to the threshold energy by a parabolic field distribution is equivalent to a field of 5.2× 10 4 volts cm - 1 . http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review American Physical Society (APS)

Threshold Energy for Electron-Hole Pair-Production by Electrons in Silicon

Physical Review , Volume 108 (1) – Oct 1, 1957
6 pages

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Publisher
American Physical Society (APS)
Copyright
Copyright © 1957 The American Physical Society
ISSN
1536-6065
DOI
10.1103/PhysRev.108.29
Publisher site
See Article on Publisher Site

Abstract

Measurements have been made of the reverse bias required for the onset of multiplication in silicon p - n junctions of various widths. A value of 2.25±0.10 ev is arrived at for the threshold energy for electron-hole pair-production by energetic electrons. There is apparently a slight variation of the threshold energy with crystallographic direction; the directions 100, 110, 111, are listed in ascending order of threshold energies. The ionization rate for electrons is greater than for holes. The maximum phonon drag opposing the acceleration of an electron up to the threshold energy by a parabolic field distribution is equivalent to a field of 5.2× 10 4 volts cm - 1 .

Journal

Physical ReviewAmerican Physical Society (APS)

Published: Oct 1, 1957

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