Access the full text.
Sign up today, get DeepDyve free for 14 days.
References for this paper are not available at this time. We will be adding them shortly, thank you for your patience.
Measurements have been made of the reverse bias required for the onset of multiplication in silicon p - n junctions of various widths. A value of 2.25±0.10 ev is arrived at for the threshold energy for electron-hole pair-production by energetic electrons. There is apparently a slight variation of the threshold energy with crystallographic direction; the directions 100, 110, 111, are listed in ascending order of threshold energies. The ionization rate for electrons is greater than for holes. The maximum phonon drag opposing the acceleration of an electron up to the threshold energy by a parabolic field distribution is equivalent to a field of 5.2× 10 4 volts cm - 1 .
Physical Review – American Physical Society (APS)
Published: Oct 1, 1957
Read and print from thousands of top scholarly journals.
Already have an account? Log in
Bookmark this article. You can see your Bookmarks on your DeepDyve Library.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Copy and paste the desired citation format or use the link below to download a file formatted for EndNote
Access the full text.
Sign up today, get DeepDyve free for 14 days.
All DeepDyve websites use cookies to improve your online experience. They were placed on your computer when you launched this website. You can change your cookie settings through your browser.