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Kinetics of ordered growth of Si on Si(100) at low temperatures

Kinetics of ordered growth of Si on Si(100) at low temperatures The temperature of the crystalline-disorder transition observed in temperature ramp silicon films grown on (100) Si by molecular-beam epitaxy is found to depend strongly on the deposition rate. This observation can be modeled if growth by random nucleation of dimer strings, as suggested by Tsao et al ., is assumed to be a thermally activated process which becomes frozen upon further deposition. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Kinetics of ordered growth of Si on Si(100) at low temperatures

Physical Review B , Volume 40 (3) – Jul 15, 1989
5 pages

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Publisher
American Physical Society (APS)
Copyright
Copyright © 1989 The American Physical Society
ISSN
1095-3795
DOI
10.1103/PhysRevB.40.2005
Publisher site
See Article on Publisher Site

Abstract

The temperature of the crystalline-disorder transition observed in temperature ramp silicon films grown on (100) Si by molecular-beam epitaxy is found to depend strongly on the deposition rate. This observation can be modeled if growth by random nucleation of dimer strings, as suggested by Tsao et al ., is assumed to be a thermally activated process which becomes frozen upon further deposition.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Jul 15, 1989

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