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Excitation energy dependence of the photoluminescence spectrum of an In x Ga 1 − x N ∕ GaN single quantum well structure

Excitation energy dependence of the photoluminescence spectrum of an In x Ga 1 − x N ∕ GaN single... We have observed oscillations in the low temperature ( T < 50 K ) photoluminescence excitation spectra of an In x Ga 1 − x N ∕ GaN single quantum well at photon energies above the GaN band gap. We attribute the features in the spectra to excitation of electrons at multiples of the LO phonon energy above the GaN conduction band edge. The rapid cooling of these electrons to the GaN conduction band edge and their subsequent capture leads to a shift, and hence the oscillations, in the photoluminescence spectrum. We interpret the shift in the spectrum as being due to a modification of the occupation of the distribution of localization centers. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Excitation energy dependence of the photoluminescence spectrum of an In x Ga 1 − x N ∕ GaN single quantum well structure

Hylton, Nicholas P; Dawson, Philip P
Physical Review B , Volume 76 (20) – Nov 15, 2007
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Publisher
American Physical Society (APS)
Copyright
Copyright © 2007 The American Physical Society
ISSN
1550-235X
DOI
10.1103/PhysRevB.76.205403
Publisher site
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Abstract

We have observed oscillations in the low temperature ( T < 50 K ) photoluminescence excitation spectra of an In x Ga 1 − x N ∕ GaN single quantum well at photon energies above the GaN band gap. We attribute the features in the spectra to excitation of electrons at multiples of the LO phonon energy above the GaN conduction band edge. The rapid cooling of these electrons to the GaN conduction band edge and their subsequent capture leads to a shift, and hence the oscillations, in the photoluminescence spectrum. We interpret the shift in the spectrum as being due to a modification of the occupation of the distribution of localization centers.

Journal

Physical Review B – American Physical Society (APS)

Published: Nov 15, 2007

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