Access the full text.
Sign up today, get DeepDyve free for 14 days.
References for this paper are not available at this time. We will be adding them shortly, thank you for your patience.
High- T c oxide-superconductor Nd 2 - x Ce 3 CuO 4 single-crystal thin films were used to observe the critical sheet resistance at the insulator-superconductor transition. The films were epitaxially grown on SrTiO 3 (100) by the method of molecular-beam epitaxy. The electron transport properties of these films are drastically influenced by oxygen-impurity concentration and show clearly the evidence of Anderson localization attributed to two dimensionality. It is found that the critical sheet resistance R □ at the onset of superconductivity takes a value within a range from 6 to 8 kΩ, which is close to the value h /4 e 2 =6.45 kΩ. Our results provide clear evidence that Anderson localization induces the universal behavior observed at the supercondutor-insulator transition.
Physical Review B – American Physical Society (APS)
Published: Apr 1, 1991
Read and print from thousands of top scholarly journals.
Already have an account? Log in
Bookmark this article. You can see your Bookmarks on your DeepDyve Library.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Copy and paste the desired citation format or use the link below to download a file formatted for EndNote
Access the full text.
Sign up today, get DeepDyve free for 14 days.
All DeepDyve websites use cookies to improve your online experience. They were placed on your computer when you launched this website. You can change your cookie settings through your browser.