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Alloy-scattering and strain-fluctuation-scattering contributions to the low-temperature electron mobility in ternary quantum wells and heterostructures

Alloy-scattering and strain-fluctuation-scattering contributions to the low-temperature electron... We present theory and data for the low-temperature electron mobility in ternary quantum wells (QW’s). In our model the electrons are scattered from spatially fluctuating strain-induced potentials and alloy potentials arising from alloy disorder both in lattice-matched and strained QW’s. We find that the mobility does not depend sensitively on the amount of the average strain in the In x Ga 1 - x As quantum well but on the strain fluctuation. Lower mobilities observed in strained quantum wells are explained in terms of possible clustering effects which may be more severe in strained systems: The theoretical results agree with our data from strained In 0.2 Ga 0.8 As/GaAs QW’s for a clustered In-atom distribution. On the other hand, the recent data from lattice-matched In 0.53 Ga 0.47 As/ In 0.52 Al 0.48 As heterostructures are reasonably explained for a microscopically random In-atom distribution without using the clustering assumption. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Alloy-scattering and strain-fluctuation-scattering contributions to the low-temperature electron mobility in ternary quantum wells and heterostructures

Lyo, S. K; Fritz, I. J
Physical Review B , Volume 46 (12) – Sep 15, 1992
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Publisher
American Physical Society (APS)
Copyright
Copyright © 1992 The American Physical Society
ISSN
1095-3795
DOI
10.1103/PhysRevB.46.7931
Publisher site
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Abstract

We present theory and data for the low-temperature electron mobility in ternary quantum wells (QW’s). In our model the electrons are scattered from spatially fluctuating strain-induced potentials and alloy potentials arising from alloy disorder both in lattice-matched and strained QW’s. We find that the mobility does not depend sensitively on the amount of the average strain in the In x Ga 1 - x As quantum well but on the strain fluctuation. Lower mobilities observed in strained quantum wells are explained in terms of possible clustering effects which may be more severe in strained systems: The theoretical results agree with our data from strained In 0.2 Ga 0.8 As/GaAs QW’s for a clustered In-atom distribution. On the other hand, the recent data from lattice-matched In 0.53 Ga 0.47 As/ In 0.52 Al 0.48 As heterostructures are reasonably explained for a microscopically random In-atom distribution without using the clustering assumption.

Journal

Physical Review B – American Physical Society (APS)

Published: Sep 15, 1992

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