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) pp. L 10–L 12 Part 2, No. 1A/B, 15 January 2003 #2003 The Japan Society of Applied Physics Preparation of Wide - Gap Hydrogenated Amorphous Silicon Carbide Thin Films by Hot-Wire Chemical Vapor ...
and electrical properties of p-type hydrogenated amorphous silicon carbide (a-SiC:H) films prepared using a nonvacuum process in a simple chamber with a vaporized silicon ink consisting of cyclopentasilane ...
In order to prepare high-quality hydrogenated amorphous silicon carbide () films with a wide band gap , we propose use of a separately excited plasma CVD (SEPCVD) system composed of two independent ...
wear resistance, high ther- for sputtering of Si species. Films were fabricated in ar- mal stability and good dielectric properties [2]. SiC is an indirect wide band gap semiconductor. Among all known ...
to carbon after annealing in Ar atmosphere (Fig. 3a) [106]. The amorphous carbon-coated FeS polycrystalline nanosheets, after annealing at 400°C for 2 h, presented a thickness ranging from 4 to 10 nm ...
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