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The effect of excess gallium vacancies in low‐temperature GaAs/AlAs/GaAs:Si heterostructures

Journal of Applied Physics , Volume 80 (1) – Jul 1, 1996

Details

Publisher
American Institute of Physics
Copyright
Copyright © 1996 American Institute of Physics
ISSN
0021-8979
eISSN
1089-7550
D.O.I.
10.1063/1.362742
Publisher site
See Article on Publisher Site
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