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Stress‐released layer formed by pulsed ruby laser annealing on GaAs‐on‐Si

Journal of Applied Physics , Volume 67 (7) – Apr 1, 1990

Details

Publisher
American Institute of Physics
Copyright
Copyright © 1990 American Institute of Physics
ISSN
0021-8979
eISSN
1089-7550
D.O.I.
10.1063/1.345374
Publisher site
See Article on Publisher Site
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