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phonon frequencies indicates that a compressive strain existed in the InGaAs layers of the chirped superlattices, which is significant for analyzing the device failure of quantum cascade lasers operating ...
with reduced linewidth for 1.3 µm device application by using GaAsN strain -compensating layers . The Raman spectra of InGaAs QDs covered by GaAsN0.009 show the InGaAs QD phonon frequency shift toward ...
Strained layers of InGaAs on GaAs have been studied by Raman scattering under high pressure. More accurate values are given for the frequencies of the LO and TO phonons in GaAs and their pressure ...
, SiGe and InGaAs were studied and the information on the phonon deformation potentials was deduced from the phonon frequency shift measured by Raman spectroscopy. Strain dependent changes in electronic ...
-assembled InGaAs /GaAs quantum dot. We find the hole wave functions using the 8-band k p model and calculate phonon - assisted spin relaxation rates for the ground-state Zeeman doublet. We systematically study ...
deposition (LPMOCVD). We used Raman spectroscopy to characterize the quality of epilayers and measure the strain . Raman spectra from InGa1As epitaxial layers of various compositions were studied . Raman spectra ...
Photoluminescence and photoluminescence excitation spectra of strained - layer InGaAs /GaAs single quantum wells have been studied at 2 K. Photogeneration of carriers in the well is found ...
This study is focused on structural and optical properties of multilayer InAs/ InGaAs dot-in-a-well (DWELL) heterostructure with varying capping layer thickness. Two samples A and B are considered ...
The dependence of disorder on InyGa1-yAs thickness in pseudomorphic strained -layerAlxGa1-xAs/InyGa1-yAs/GaAsheterostructures is studied by means of photoluminescence (PL)and Raman scattering. PL ...
affect the rolling process. In order to understand the diameter reduction in Au-assistant microtubes, room temperature (RT) Raman measurements have been employed to study the strain effects reflected ...
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