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, 2005, pp. 1099–1106. Original Russian Text Copyright © 2005 by Yugova, Mil’vidskiÏ, Rzaev, Schäffler. SURFACE AND THIN FILMS Thermally Stimulated Relaxation of Misfit Strains in Si Ge / Si (100 ...
The objectives of this investigation are structural and physical characteristics of the n- Si 1 - x Ge x /n(p)- Si heterojunction under strong elastic deformation of Si 1 - x Ge x layers which gives rise ...
. The structures consist ofa Si ~_xGexcapping layer with a 0.32 and 0.52 Ge concentra- tion, grown on a compositionally graded Si ~ xGex buffer layer . The effect of the composition grading rate on the layer quality ...
. Mechanisms of misfit dislocation generation as well as peculiarities of dislocation structure formation in Si Ge / Si multilayer heterostructures 0.7 0.3 grown by molecular beam epitaxy with low-temperature (LT ...
, Yugova. SURFACE AND THIN FILMS Effect of the Sign of Misfit Strain on the Formation of a Dislocation Structure in SiGe Epitaxial Layers Grown on Si and Ge Substrates V. I. Vdovin*, M. G. Mil’vidskiÏ ...
growth and structure evaluation of strain -relaxed Ge Sn buffer layers grown on Si (0 0 1 ), virtual Ge (0 0 1 ) and bulk 1 − x x Ge (0 0 1 ) substrates. In the case of Si (0 0 1 ), amorphous Ge Sn phases 1 − x x ...
We have calculated the equilibrium misfit dislocation density and strain profiles in reverse-graded heteroepitaxial layers , using Si1xGex/ Si (001) as a model material system. In these structures ...
in the prevention of misfit dislocations that can impact adversely on the active device regions. The stress in both device silicon cap layers and the underlying Si1− x Ge x virtual substrates is characterized ...
epitaxy growth of Ge Si / Si heterostructures, the relative contributions x 1 − x of surface roughening and dislocation injection to strain relaxation may be qualitatively and quantitatively assessed ...
dominate in thick Ge layers on Si (001) substrates. The complete elimination of dislocations is achieved by growing self‐aligned and self‐limited Ge microcrystals with fully faceted growth fronts ...
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