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Influence of the preepitaxial annealing and polycrystalline silicon deposition processes on oxygen precipitation and internal gettering in N/N + (100) epitaxial silicon wafers

Wijaranakula, W.; Matlock, J. H.
Journal of Applied Physics , Volume 65 (5) American Institute of PhysicsMar 1, 1989
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Title
Influence of the preepitaxial annealing and polycrystalline silicon deposition processes on oxygen precipitation and internal gettering in N/N + (100) epitaxial silicon wafers
Author(s)
Wijaranakula, W.; Matlock, J. H.
Journal
Journal of Applied Physics , Volume 65 (5) American Institute of Physics – Mar 1, 1989
Publisher
American Institute of Physics
Copyright
Copyright © 1989 American Institute of Physics
ISSN
0021-8979
eISSN
1089-7550
D.O.I.
10.1063/1.342853
Publisher site
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