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heterostructure quantum well laser diode structures grown at a nonoptimal substrate temperature lower than 680~ by molecular beam epitaxy . Reduction by a factor of up to three in the threshold current ...
Low-temperature (∼600 °C) molecular beam epitaxy (MBE) growth of AlGaAs has been studied. It was found that the quality of AlGaAs grown at low temperatures can be as good as that grown at high ...
of AlGaAs -GaAs and AlGaAs -GaAs-InGaAs quantum well lasers can be grown by solid source molecular beam epitaxy using a resistively heated graphite filament as a p-type dopant source. Also results are presented ...
emitting at 1040 nm were grown by molecular beam epitaxy . The lateral design consists of a tapered gain guided and a ridge-waveguide section having an overall length of mm. An output power of more than 11 W ...
structure and the mounting technology are essential for realizing longer resonators. Therefore an improved InGaAs/ AlGaAs single quantum well vertical structure with low internal losses was grown by molecular ...
Lasing emission is demonstrated at room temperature in the entire spectral region from 1.29 to 1.52 microns using GaInNAs/GaAs quantum well (QW) laser diodes (LD) grown by molecular beam epitaxy ...
The growth of GaInNAs/GaAs quantum well (QW) has been investigated by solid-source molecular beam epitaxy (MBE). N was introduced by a dc-active plasma source. Highest N concentration of 2.6 ...
by conventional molecular beam epitaxy (MBE) using a radio frequency plasma source. Lattice-matched bulk samples and several strained single quantum well (SQW) and multiple quantum well (MQW) structures were grown ...
and structural characterization of GaAs and GaP nanowires (NWs) grown by molecular beam epitaxy (MBE) on GaAs(111)B and Si(111) substrates, using Au-catalyzed vapor–liquid–solid growth technique. It is shown ...
emitters, molecular beam epitaxy INTRODUCTION Epitaxial self-assembled III–V quantum dots (QDs), so-called ‘artificial atoms’, are of particular interest for single-photon emission, owing to their stability ...
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