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. The ohmic contact on p- InP region plays an important role in the performance of detectors and FPAs. In thiscase, the series resistance to p- InP layer of each pixel is up to 1×106Ω. The FPAs were simulated ...
. Highly transparent superconducting contacts to a two-dimensional electron gas located in a InGaAs / InP heterostructure have been realized by using a Au/NbN system. A decrease in the differential resistance ...
current and voltage of solar cell, respectively. |${I}_{\mathrm{ph}}$| is photo-generated current. |${R}_{\mathrm{s}}$| and |${R}_{\mathrm{sh}}$| represent the series resistance and the parallel resistance ...
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